Low-temperature growth of GaInNAs/GaAs quantum wells for 1.3-μm lasers using metal-organic vapor-phase epitaxy
2001 (English)In: Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On, 2001, 563-566 p.Conference paper (Refereed)
GaInNAs/GaAs quantum-well (QW) lasers emitting at 1.3 μm were grown using metal-organic vapor-phase epitaxy (MOVPE) in the limit of very low growth rate and temperature. The material was characterized by photoluminescence (PL) spectroscopy as well as by implementation in broad-area (BA) edge-emitting lasers. While the PL intensity was found to decrease by more than two orders of magnitude between 1175 and 1350 nm, the corresponding BA laser threshold current showed a much more modest increase. For a 1.28-μm laser the transparency current was 0.8 kA/cm2, the slope efficiency 0.24 W/A per facet and T0=100 K. Comparison between PL emission properties and BA laser performance revealed a complex relationship. A high PL intensity does not necessarily lead to low threshold-current lasers. In these cases, the FWHM seems to be the more relevant parameter for QW optimization
Place, publisher, year, edition, pages
2001. 563-566 p.
IdentifiersURN: urn:nbn:se:kth:diva-5278DOI: 10.1109/ICIPRM.2001.929211ISBN: 0-7803-6700-6OAI: oai:DiVA.org:kth-5278DiVA: diva2:8284
14 maj 2001 - 18 maj 2001, Nara , Japan
QC 201009302005-06-072005-06-072010-09-30Bibliographically approved