Optimization of MOVPE-grown GaInNAs/GaAs quantum wells for 1.3-μm laser applications
2002 (English)Conference paper (Refereed)
The effects of high group-V precursor flows during metal-organic vapor phase epitaxial growthof GaInNAs QWs are investigated. It is shown that photoluminescence line width, waferuniformity, and sensitivity to growth temperature can be improved using V/III ratios in excess of2000. Broad area GaInNAdGaAs SQW lasers with dimensions 100 x 820 pm2 grown under theseconditions have threshold current densities as low as 660 kA/cm2 at 1.26 pm emission wavelength.
Place, publisher, year, edition, pages
2002. 619-621 p.
IdentifiersURN: urn:nbn:se:kth:diva-5279OAI: oai:DiVA.org:kth-5279DiVA: diva2:8285
Proc. 14th Indium Phosphide and Related Materials Conference, Stockholm, Sweden, 12-16 May 2002
QC 201010012005-06-072005-06-072010-10-01Bibliographically approved