Morphological instability of GaInNAs quantum wells on Al-containing layers grown by metalorganic vapor-phase epitaxy
2003 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 82, no 15, 2431-2433 p.Article in journal (Refereed) Published
The optical and structural integrity of metalorganic vapor-phase epitaxy-grown GaInNAs/GaAs single quantum wells on AlGaAs/GaAs distributed Bragg reflectors (DBR) was reported. Photoluminescence and surface morphology were investigated for different numbers of DBR periods and different DBR-growth temperatures. It was found that decreasing the DBR-growth temperature lowers the surface concentration of Al and improves the GaInNAs quantum-well morphology.
Place, publisher, year, edition, pages
2003. Vol. 82, no 15, 2431-2433 p.
Atomic force microscopy, Photoluminescence, Secondary ion mass spectrometry, Semiconducting aluminum compounds, Semiconducting gallium arsenide, Semiconductor quantum wells, Vapor phase epitaxy
IdentifiersURN: urn:nbn:se:kth:diva-5280DOI: 10.1063/1.1567810ISI: 000182104900021OAI: oai:DiVA.org:kth-5280DiVA: diva2:8286
QC 201009232005-06-072005-06-072010-09-23Bibliographically approved