Low-threshold, high-temperature operation of 1.2 mu m InGaAs vertical cavity lasers
2001 (English)In: Electronics Letters, ISSN 0013-5194, E-ISSN 1350-911X, Vol. 37, no 15, 957-958 p.Article in journal (Refereed) Published
The growth and characterisation of high performance InGaAs/GaAs quantum-well vertical cavity lasers with an emission wavelength of 1215 nm is reported. Continuous wave operation is demonstrated up to 105°C with a threshold current below 1 mA for T < 80°C. For a 2.5 μm device the room temperature threshold current, output power and slope efficiency is 0.6 mA, 0.6 mW and 0.2 W/A, respectively.
Place, publisher, year, edition, pages
2001. Vol. 37, no 15, 957-958 p.
Continuous wave lasers, Current density, Fiber optics, High temperature operations, Metallorganic vapor phase epitaxy, Mirrors, Optical communication, Photoluminescence, Reflection, Semiconducting indium gallium arsenide, Semiconductor quantum wells, Thermodynamic stability
IdentifiersURN: urn:nbn:se:kth:diva-5283DOI: 10.1049/el:20010644ISI: 000170317700020OAI: oai:DiVA.org:kth-5283DiVA: diva2:8289
QC 201009212005-06-072005-06-072010-09-21Bibliographically approved