AlGaAs/GaAs/InGaAs pnp-type vertical-cavity surface-emitting transistor-lasers
2015 (English)In: Optics Express, ISSN 1094-4087, Vol. 23, no 12, 15680-15699 p.Article in journal (Refereed) Published
We report on the design, fabrication and analysis of vertical-cavity surface-emitting transistor-lasers (T-VCSELs) based on the homogeneous integration of an InGaAs/GaAs VCSEL and an AlGaAs/GaAs pnp-heterojunction bipolar transistor (HBT). Epitaxial regrowth confinement, modulation doping, intracavity contacting and non-conducting mirrors are used to ensure a low-loss structure, and a variety of design variations are investigated for a proper internal biasing and current injection to ensure a wide operating range. Optimized devices show mW-range output power, mA-range base threshold current and high-temperature operation to at least 60 degrees C with the transistor in its active mode of operation for base currents well beyond threshold. Current confinement schemes based on pnp-blocking layers or a buried tunnel junction are investigated as well as asymmetric current injection for reduced extrinsic resistances.
Place, publisher, year, edition, pages
2015. Vol. 23, no 12, 15680-15699 p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-171298DOI: 10.1364/OE.23.015680ISI: 000356902500055OAI: oai:DiVA.org:kth-171298DiVA: diva2:843233
QC 201507282015-07-282015-07-272015-07-28Bibliographically approved