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Selective epitaxy growth of Si1-xGex layers for MOSFETs and FinFETs
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
2015 (English)In: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 26, no 7, 4584-4603 p.Article in journal (Refereed) Published
Abstract [en]

This article reviews the selective epitaxy growth of intrinsic, B- and C-doped SiGe layers on recessed (or flat) exposed Si areas for MOSFETs as well as on Si-fins for FinFETs. A detailed empirical model for the growth, integration issues including epitaxy quality, selectivity, dopant incorporation, and pattern dependency (or loading effect) is presented.

Place, publisher, year, edition, pages
2015. Vol. 26, no 7, 4584-4603 p.
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Materials Engineering
Identifiers
URN: urn:nbn:se:kth:diva-172180DOI: 10.1007/s10854-015-3123-zISI: 000358060700016OAI: oai:DiVA.org:kth-172180DiVA: diva2:846572
Note

QC 20150817

Available from: 2015-08-17 Created: 2015-08-14 Last updated: 2017-12-04Bibliographically approved

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