Selective epitaxy growth of Si1-xGex layers for MOSFETs and FinFETs
2015 (English)In: Journal of materials science. Materials in electronics, ISSN 0957-4522, E-ISSN 1573-482X, Vol. 26, no 7, 4584-4603 p.Article in journal (Refereed) Published
This article reviews the selective epitaxy growth of intrinsic, B- and C-doped SiGe layers on recessed (or flat) exposed Si areas for MOSFETs as well as on Si-fins for FinFETs. A detailed empirical model for the growth, integration issues including epitaxy quality, selectivity, dopant incorporation, and pattern dependency (or loading effect) is presented.
Place, publisher, year, edition, pages
2015. Vol. 26, no 7, 4584-4603 p.
IdentifiersURN: urn:nbn:se:kth:diva-172180DOI: 10.1007/s10854-015-3123-zISI: 000358060700016OAI: oai:DiVA.org:kth-172180DiVA: diva2:846572
QC 201508172015-08-172015-08-142015-08-17Bibliographically approved