Integrated circuits in silicon carbide for high-temperature applications
2015 (English)In: MRS bulletin, ISSN 0883-7694, Vol. 40, no 5, 431-438 p.Article in journal (Refereed) Published
High-temperature electronic applications are presently limited to a maximum operational temperature of 225 degrees C for commercial integrated circuits (ICs) using silicon. One promise of silicon carbide (SiC) is high-temperature operation, although most commercial efforts have targeted high-voltage discrete devices. Depending on the technology choice, several processing challenges are involved in making ICs using SiC. Bipolar, metal oxide semiconductor field-effect transistors, and junction field-effect transistor technologies have been demonstrated in operating temperatures of up to 600 degrees C. Current technology performance and processing challenges relating to making ICs in SiC are reviewed in this article.
Place, publisher, year, edition, pages
2015. Vol. 40, no 5, 431-438 p.
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-172254DOI: 10.1557/mrs.2015.90ISI: 000355272900015ScopusID: 2-s2.0-84929175121OAI: oai:DiVA.org:kth-172254DiVA: diva2:847723
QC 201508212015-08-212015-08-142015-08-21Bibliographically approved