Change search
ReferencesLink to record
Permanent link

Direct link
Integrated circuits in silicon carbide for high-temperature applications
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
2015 (English)In: MRS bulletin, ISSN 0883-7694, Vol. 40, no 5, 431-438 p.Article in journal (Refereed) Published
Abstract [en]

High-temperature electronic applications are presently limited to a maximum operational temperature of 225 degrees C for commercial integrated circuits (ICs) using silicon. One promise of silicon carbide (SiC) is high-temperature operation, although most commercial efforts have targeted high-voltage discrete devices. Depending on the technology choice, several processing challenges are involved in making ICs using SiC. Bipolar, metal oxide semiconductor field-effect transistors, and junction field-effect transistor technologies have been demonstrated in operating temperatures of up to 600 degrees C. Current technology performance and processing challenges relating to making ICs in SiC are reviewed in this article.

Place, publisher, year, edition, pages
2015. Vol. 40, no 5, 431-438 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
URN: urn:nbn:se:kth:diva-172254DOI: 10.1557/mrs.2015.90ISI: 000355272900015ScopusID: 2-s2.0-84929175121OAI: diva2:847723

QC 20150821

Available from: 2015-08-21 Created: 2015-08-14 Last updated: 2015-08-21Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Zetterling, Carl-Mikael
By organisation
Integrated Devices and Circuits
In the same journal
MRS bulletin
Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 29 hits
ReferencesLink to record
Permanent link

Direct link