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Integrated circuits in silicon carbide for high-temperature applications
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
2015 (English)In: MRS bulletin, ISSN 0883-7694, E-ISSN 1938-1425, Vol. 40, no 5, 431-438 p.Article in journal (Refereed) Published
Abstract [en]

High-temperature electronic applications are presently limited to a maximum operational temperature of 225 degrees C for commercial integrated circuits (ICs) using silicon. One promise of silicon carbide (SiC) is high-temperature operation, although most commercial efforts have targeted high-voltage discrete devices. Depending on the technology choice, several processing challenges are involved in making ICs using SiC. Bipolar, metal oxide semiconductor field-effect transistors, and junction field-effect transistor technologies have been demonstrated in operating temperatures of up to 600 degrees C. Current technology performance and processing challenges relating to making ICs in SiC are reviewed in this article.

Place, publisher, year, edition, pages
2015. Vol. 40, no 5, 431-438 p.
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-172254DOI: 10.1557/mrs.2015.90ISI: 000355272900015Scopus ID: 2-s2.0-84929175121OAI: oai:DiVA.org:kth-172254DiVA: diva2:847723
Note

QC 20150821

Available from: 2015-08-21 Created: 2015-08-14 Last updated: 2017-12-04Bibliographically approved

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Zetterling, Carl-Mikael

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