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Near field thermal memory based on radiative phase bistability of VO2
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.ORCID iD: 0000-0002-0111-9009
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.ORCID iD: 0000-0002-3368-9786
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
2015 (English)In: Journal of Physics D: Applied Physics, ISSN 0022-3727, E-ISSN 1361-6463, Vol. 48, no 30, 305104Article in journal (Refereed) Published
Abstract [en]

We report the concept of a near-field memory device based on the radiative bistability effect in the system of two closely separated parallel plates of SiO2 and VO2 which exchange heat by thermal radiation in vacuum. We demonstrate that the VO2 plate, having metal-insulator transition at 340 K, has two thermodynamical steady-states. One can switch between the states using an external laser impulse. We show that due to near-field photon tunneling between the plates, the switching time is found to be only 5 ms which is several orders lower than in case of far field.

Place, publisher, year, edition, pages
2015. Vol. 48, no 30, 305104
Keyword [en]
heat transfer, bistability, memory effect, metal insulator transition, thermal radiation
National Category
Physical Sciences
Identifiers
URN: urn:nbn:se:kth:diva-172481DOI: 10.1088/0022-3727/48/30/305104ISI: 000357739500010Scopus ID: 2-s2.0-84937010975OAI: oai:DiVA.org:kth-172481DiVA: diva2:848842
Funder
Swedish Research Council
Note

QC 20150826

Available from: 2015-08-26 Created: 2015-08-25 Last updated: 2017-12-04Bibliographically approved

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Dai, JinYan, Min

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