Merits of Buried Grid Technology for Advanced SiC Device Concepts
2011 (English)In: GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES, 2011, Vol. 41, no 8, 155-162 p.Conference paper (Refereed)
Selected examples of the use of buried grid technology for SiC devices are discussed. First example is development of normally-off and normally-on JFETs, Second the development of Schottky barrier diodes for 250 degrees C operation. Other examples are efficient junction termination and avalanche UV detectors. Experimental results are used in support of simulations.
Place, publisher, year, edition, pages
2011. Vol. 41, no 8, 155-162 p.
, ECS Transactions, ISSN 1938-5862
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-173346DOI: 10.1149/1.3631493ISI: 000309600300014ScopusID: 2-s2.0-84857354398ISBN: 978-1-60768-262-2OAI: oai:DiVA.org:kth-173346DiVA: diva2:852718
Symposium on GaN and SiC Power Technologies held during the 220th Meeting of the Electrochemical-Society, OCT 09-14, 2011, Boston, MA
QC 201509102015-09-102015-09-102015-09-15Bibliographically approved