Merits of Buried Grid Technology for SiC JBS Diodes
2012 (English)In: GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 2, 2012, Vol. 50, no 3, 415-424 p.Conference paper (Refereed)
The SiC Schottky barrier diodes for 200 degrees C to 250 degrees C operation have been developed using buried grid (BG) technology. 2A and 10A, 1700V BG JBS diodes have been fabricated and evaluated. Manufactured 10A, 1700V BG JBS diodes have leakage current at least three orders of magnitude lower compared to the typical data sheet values of the commercial devices. The leakage current at 250 degrees C is of the same order of magnitude as that of the commercial devices at 175 degrees C. The two alternative technologies for realization of BG, implantation and epitaxy, have been compared by simulations. The epitaxial grid is shown to have superior potential for best trade-off between on-state voltage and leakage current.
Place, publisher, year, edition, pages
2012. Vol. 50, no 3, 415-424 p.
, ECS Transactions, ISSN 1938-5862
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-173347DOI: 10.1149/05003.0415ecstISI: 000337755900045ScopusID: 2-s2.0-84885750739ISBN: 978-1-60768-351-3OAI: oai:DiVA.org:kth-173347DiVA: diva2:852719
2nd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies as part of ECS Fall Meeting, OCT 07-12, 2012, Honolulu, HI
QC 201509102015-09-102015-09-102015-09-15Bibliographically approved