High temperature capable SiC Schottky diodes, based on buried grid design
2014 (English)In: International Conference and Exhibition on High Temperature Electronics, 2014, 158-160 p.Conference paper (Refereed)
Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable T0254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron’s buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.
Place, publisher, year, edition, pages
2014. 158-160 p.
Diodes; High temperature operations; Silicon carbide, Electrical characteristic; Grid design; High temperature; Orders of magnitude; SiC Schottky diode, Schottky barrier diodes
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-173349ScopusID: 2-s2.0-84916223864OAI: oai:DiVA.org:kth-173349DiVA: diva2:852742
IMAPS International Conference and Exhibition on High Temperature Electronics, HiTEC 2014
QC 201509102015-09-102015-09-102015-09-15Bibliographically approved