Effect of X-ray irradiation on the blinking of single silicon nanocrystals
2015 (English)In: Physica Status Solidi (a) applications and materials science, ISSN 1862-6300, E-ISSN 1862-6319, Vol. 212, no 12Article in journal (Refereed) Published
Photoluminescence (PL) intermittency (blinking) observed for single silicon nanocrystals (Si-NCs) embedded in oxide is usually attributed to trapping/de-trapping of carriers in the vicinity of the NC. Following this model, we propose that blinking could be modified by introducing new trap sites, for example, via X-rays. In this work, we present a study of the effect of X-ray irradiation (up to 65 kGy in SiO) on the blinking of single Si-NCs embedded in oxide nanowalls. We show that the luminescence characteristics, such as spectrum and life-time, are unaffected by X-rays. However, substantial changes in ON-state PL intensity, switching frequency, and duty cycle emerge from the blinking traces, while the ON- and OFF- time distributions remain of mono-exponential character. Although we do not observe a clear monotonic dependence of the blinking parameters on the absorbed dose, our study suggests that, in the future, Si-NCs could be blinking-engineered via X-ray irradiation.
Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2015. Vol. 212, no 12
Other Physics Topics
IdentifiersURN: urn:nbn:se:kth:diva-174101DOI: 10.1002/pssa.201532652ISI: 000366589900006ScopusID: 2-s2.0-84949591107OAI: oai:DiVA.org:kth-174101DiVA: diva2:857823
QC 201510012015-09-302015-09-302016-01-15Bibliographically approved