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Polycrystalline Si<sub>x</sub>Ge<sub>1-x</sub>as the gate electrode in CMOS technology
KTH, Superseded Departments, Electronic Systems Design.
2000 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Institutionen för elektronisk systemkonstruktion , 2000. , iv, 42 p.
Series
Trita-FTE, ISSN 0284-0545 ; 0002
Identifiers
URN: urn:nbn:se:kth:diva-2924OAI: oai:DiVA.org:kth-2924DiVA: diva2:8661
Public defence
2000-02-25
Note
NR 20140805Available from: 2000-03-24 Created: 2000-03-24Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
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