Change search
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf
Integration of Silicon Nanowires with CMOS
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-9690-2292
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2014 (English)In: Beyond CMOS Nanodevices 1, Wiley Blackwell , 2014, 65-72 p.Chapter in book (Other academic)
Abstract [en]

Silicon nanowires exhibit attractive characteristics that have motivated their use as the sensor element in a biochemical sensor system. An integrated silicon nanowire and complementary metal-oxide-semiconductor (CMOS) circuit chip would allow more design freedom with respect to interaction with the full biochemical sensor system, including interaction with the electrolyte solution. The CMOS fabrication process is divided into two parts, called the front-end-of-line (FEOL) and back-end-of-line (BEOL) processing. A CMOS process that allows the integration of silicon nanowires, as described in this chapter offers a vast amount of design opportunities to enhance the performance of the silicon nanowire-based sensor. The chapter describes a sensor design that allows measurement of the conductance variations of biosensitive silicon nanowires in a serial manner by using on-chip integrated CMOS circuitry. Integration of silicon nanowires can also be achieved by defining the silicon nanowires in the silicon layer of a SOI wafer.

Place, publisher, year, edition, pages
Wiley Blackwell , 2014. 65-72 p.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering Embedded Systems
Identifiers
URN: urn:nbn:se:kth:diva-174717DOI: 10.1002/9781118984772.ch4Scopus ID: 2-s2.0-84926405887ISBN: 9781118984772 (print)ISBN: 9781848216549 (print)OAI: oai:DiVA.org:kth-174717DiVA: diva2:867572
Note

QC 20151105

Available from: 2015-11-05 Created: 2015-10-07 Last updated: 2015-11-05Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Authority records BETA

Hellström, Per-ErikJayakumar, Ganesh

Search in DiVA

By author/editor
Hellström, Per-ErikJayakumar, GaneshÖstling, Mikael
By organisation
Integrated Devices and Circuits
Other Electrical Engineering, Electronic Engineering, Information EngineeringEmbedded Systems

Search outside of DiVA

GoogleGoogle Scholar

doi
isbn
urn-nbn

Altmetric score

doi
isbn
urn-nbn
Total: 31 hits
CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf