Integration of Silicon Nanowires with CMOS
2014 (English)In: Beyond CMOS Nanodevices 1, Wiley Blackwell , 2014, 65-72 p.Chapter in book (Other academic)
Silicon nanowires exhibit attractive characteristics that have motivated their use as the sensor element in a biochemical sensor system. An integrated silicon nanowire and complementary metal-oxide-semiconductor (CMOS) circuit chip would allow more design freedom with respect to interaction with the full biochemical sensor system, including interaction with the electrolyte solution. The CMOS fabrication process is divided into two parts, called the front-end-of-line (FEOL) and back-end-of-line (BEOL) processing. A CMOS process that allows the integration of silicon nanowires, as described in this chapter offers a vast amount of design opportunities to enhance the performance of the silicon nanowire-based sensor. The chapter describes a sensor design that allows measurement of the conductance variations of biosensitive silicon nanowires in a serial manner by using on-chip integrated CMOS circuitry. Integration of silicon nanowires can also be achieved by defining the silicon nanowires in the silicon layer of a SOI wafer.
Place, publisher, year, edition, pages
Wiley Blackwell , 2014. 65-72 p.
Other Electrical Engineering, Electronic Engineering, Information Engineering Embedded Systems
IdentifiersURN: urn:nbn:se:kth:diva-174717DOI: 10.1002/9781118984772.ch4ScopusID: 2-s2.0-84926405887ISBN: 9781118984772ISBN: 9781848216549OAI: oai:DiVA.org:kth-174717DiVA: diva2:867572
QC 201511052015-11-052015-10-072015-11-05Bibliographically approved