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Modeling of HVDC IGBT in Pspice: Serving an ultimate goal for converter station EMC studies
KTH, School of Electrical Engineering (EES), Electromagnetic Engineering.
2015 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

An IGBT/diode model with more accurate characteristics than simple switchis required to serve for EMC issues from converter valve. The purpose of thismaster thesis is to develop an IGBT and diode model to achieve both accuratetransient behavior and fast simulation time during single pulse switchingtest circuit for the 4:5 kV and 2:0 kA StakPakTM IGBT module. A gate unitwhich resembles the ABB gate unit is implemented to obtain a good agreementbetween simulation and measurement. For demonstration and verication, theIGBT/diode model is applied in a simplied arm simulation of full scale ABBGeneration 4 HVDC-VSC converter station and capable of a half cell consistingof 8 series-connected IGBTs and their anti-paralleled diodes. The arm simulationresults are analyzed further for converter station EMC studies.Convergence issue is the most important problem in the whole process of modelimplementation and application. To guarantee the convergence in simulationsome characteristics such as the tail voltage at the end of turn-o is disregarded.But overall, the model is validated and adopted successfully.

Abstract [sv]

En IGBT-/diodmodell med mer exakta egenskaper an en enkel switch kravs foratt hantera EMC-problem fran omvandlarventilen. Syftet med denna magisteruppsatsar att utveckla en IGBT- och diodmodell for att uppna bade noggrantovergaende beteende och snabb simuleringstid under enkelpulsomkopplingstestkretsfor 4,5 kV och 2,0 kA-StakPak IGBT-modulen. En grindenhetsom liknar ABB-grindenheten implementeras for att fa god overensstammelsemellan simulering och matning. For demonstration och veriering, tillampasIGBT-/diodmodellen i en forenklad armsimulering av en fullskalig ABB Generation4 HVDC-VSC-omvandlarstation och med kapacitet for en halvcell bestaendeav 8 seriekopplade IGBT och deras anti-parallellkopplade dioder. Resultatenfran armsimuleringen analyseras vidare for EMC-studier av omvandlarstationen.Konvergensfragan ar det viktigaste problemet i hela processen for modellimplementeringoch -tillampning. For att garantera konvergensen i simulering ignorerasvissa egenskaper sasom svansspanningen vid slutet av avstangning. Mentotalt sett, valideras och antas modellen framgangsrikt.

Place, publisher, year, edition, pages
2015. , 68 p.
Series
EES Examensarbete / Master Thesis, TRITA-EE 2015:67
Keyword [en]
StakPakTM IGBT module, IGBT behavioral model, Single pulse test circuit, Generation 4
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-176859OAI: oai:DiVA.org:kth-176859DiVA: diva2:868427
Examiners
Available from: 2015-11-10 Created: 2015-11-10 Last updated: 2015-11-10Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
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