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High Temperature Memories in SiC Technology
KTH, School of Information and Communication Technology (ICT).
2014 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

This thesis is part of the Working On Venus (WOV) project. The aim of the project is to design electronics in silicon carbide (SiC) that can withstand the extreme surface environmen  of Venus. This thesis investigates some possible computer memory technologies that could survive on the surface of Venus. A memory must be able to function at 460 °C and after a total radiation dose of at least 200 Gy (SiC).

This thesis is a literature survey. The thesis covers several Random-Access Memory (RAM) technologies: Static RAM (SRAM), Dynamic RAM (DRAM), Ferroelectric RAM (FeRAM), Magnetic RAM (MRAM), Resistive RAM (RRAM) and Phase Change Memory (PCM). The Electrical Erasable Programmable Read-Only Memory, Flash memory and SONOS are also covered. Focus lies on device- and material-physics of the memory cells, and their extreme environment behaviour.

This thesis concludes with a discussion on technology options. The technologies are compared for their suitability for extreme environment. The thesis gives a recommendation for which memory technologies should be investigated. The final recommendation is to investigate SRAM, SONOS, FeRAM and RRAM technologies for high temperature applications.

Abstract [sv]

Denna uppsats är en del av projektet Working On Venus (WOV). Projektets mål är att designa elektronik i kiselkarbid (SiC) som tål Venus extrema ytmiljö. Denna uppsats undersöker några möjliga datorminnestekniker som kan överleva på Venus yta. Ett minne måste kunna fungera vid 460 °C och efter en total strålningsdos på minst 200 Gy (SiC).

Denna uppsats är en litteraturstudie. Uppsatsen täcker flera olika typer av RAM-minnes teknologier (eng. Random-Access Memory): Statiskt RAM-minne (SRAM), Dynamiskt RAM-minne (DRAM), Ferroelektriskt RAM-minne (FeRAM), Magnetiskt RAM-minne (MRAM), Resistivt RAM-minne (RRAM) och fasändringsminnen (PCM). EEPROM (eng. Electrical Erasable Programmable Read-Only Memory), Flash-minnen och SONOS täcks också. Fokus ligger på minnescellernas komponent- och materialfysik, samt deras extremmiljösbeteende.

Denna uppsats avslutas med en diskussion om teknikmöjligheter. Teknikerna jämfors för hur passande de är för extrema miljöer. Uppsatsen ger en rekommendation för vilka minnestekniker som bör undersokas. Den slutliga rekommendationen är att undersöka SRAM, SONOS, FeRAM och RRAM teknologier for högtemperatursanvändning.

Place, publisher, year, edition, pages
2014. , 183 p.
TRITA-ICT-EX, 2014:89
National Category
Computer and Information Science
URN: urn:nbn:se:kth:diva-177192OAI: diva2:871913
Available from: 2015-12-01 Created: 2015-11-17 Last updated: 2015-12-01Bibliographically approved

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