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Characterization and Failure Analysis of X-Ray Detector Diodes
KTH, School of Information and Communication Technology (ICT).
2014 (Swedish)Independent thesis Advanced level (professional degree), 10 credits / 15 HE creditsStudent thesis
Abstract [en]

This master thesis report consists in the characterization of silicon diodes for radiation dosimetry and the investigation of their failure. An overview on the semiconductor properties in radiation detectors is presented to give physical basis to the successive analysis. Then the experimental setups are explained and the results discussed.

The main point of the thesis work is an accurate study of the minority carrier lifetime in photodiodes, in order to verify that it can be seen as a crucial factor in failure mechanisms. To give supplementary confirmations, interaction of diā†µerent light sources (IRLEDs) are analyzed in details and suggestions for the development of a functional test method are finally presented. This thesis was done in cooperation with Acreo Swedish ICT and ScandiDos.

Place, publisher, year, edition, pages
2014. , 83 p.
Series
TRITA-ICT-EX, 2014:123
National Category
Computer and Information Science
Identifiers
URN: urn:nbn:se:kth:diva-177342OAI: oai:DiVA.org:kth-177342DiVA: diva2:872307
Examiners
Available from: 2015-12-01 Created: 2015-11-18 Last updated: 2017-08-03Bibliographically approved

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fulltext(1962 kB)10 downloads
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8b054801e3d2f9c47723118184ce973780dedc61a2fe2869ca4be4ebb04fd1ed9a9746f18e3fec4d57c2b9d43cab853e747dc4bddfe6a40de42652567abb56db
Type fulltextMimetype application/pdf

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CiteExportLink to record
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Citation style
  • apa
  • harvard1
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Language
  • de-DE
  • en-GB
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  • nn-NO
  • nn-NB
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  • Other locale
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Output format
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