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Processing Technology for Si Based Tandem Solar Cells
KTH, School of Information and Communication Technology (ICT).
2014 (English)Independent thesis Advanced level (degree of Master (Two Years)), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

This project focuses on the investigation of Silicon based Tandem solar cell fabricated by using the Hydride Vapor Phase Epitaxy (HVPE). In the state-of-the-art multi-junction solar cell manufacturing epitaxial technologies are used for sub-cell formation, such as MOVPE (Metal Organic Vapour Phase Epitaxy) [1] or MBE (Molecular Beam Epitaxy) [2]. Tandem solar cell structures consist of subcells made of III-V semiconductors serially connected or grown on a suitable semiconductor substrate [3]. The used semiconductor materials have to be lattice matched to each other and with optimum band gap combinations [4]. Multi-junction solar cells with Si and III-V semiconductor sub-cells are promising to achieve extremely high efficiency.

The objective of this project is to investigate a cost effective fabrication technology to realize III-V semiconductor and silicon based sub-cells in tandem solar cells. The Si p-n junction formation by PH3 diffusion for the silicon sub cell is studied in HVPE. A prototype InP solar cell was fabricated by HVPE and its I-V performance was studied.

In this thesis, the impact of HVPE process parameters on the silicon p-n junction formation was examined by alternating the process temperature. Silicon samples were processed in the HVPE with temperature values of 1st (605 0C) < 2nd (657 0C) < 3rd (720 0C). It is observed that the temperature affects the quality of the formed Si p-n junction. The Si samples treated at 720 0C show a diode performance with a deviated I-V curve due to parasitic resistances. The InP solar cell fabrication consisted of the epitaxial growth of sulfur doped n-InP and zinc doped p-InP materials on top of each other to form n+/n+/n-/p+ [5] structure. Ohmic conduction through the InP solar cell structure was observed after the contacts formation, which could be due to the metal alloy spiking through the p-InP emitter layer during annealing. Process mitigations to fabricate InP solar cell by HVPE are proposed at the end of project.

Place, publisher, year, edition, pages
2014. , 56 p.
Series
TRITA-ICT-EX, 2014:172
National Category
Computer and Information Science
Identifiers
URN: urn:nbn:se:kth:diva-177442OAI: oai:DiVA.org:kth-177442DiVA: diva2:872770
Examiners
Available from: 2015-11-25 Created: 2015-11-20 Last updated: 2017-08-03Bibliographically approved

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CiteExportLink to record
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Citation style
  • apa
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