Photocurrent characterisation of germanium nanowires
Independent thesis Advanced level (professional degree), 20 credits / 30 HE creditsStudent thesis
In the past decades, silicon and germanium have been investigated as a potential materials for active optical devices. Recent studies show that by applying adequate strain and n-doping, germanium can show sufficient optical gain for lasing. In this work, optical and electrical characterisation has been performed on strained and doped germanium, grown with the vaporliquid- solid technique. Fabrication of both Schottky and p-i-n junctions has been demonstrated and photocurrent spectroscopy has shown that strain on germanium nanowires can alter significantly the band structure of germanium.
Place, publisher, year, edition, pages
2013. , 43 p.
Computer and Information Science
IdentifiersURN: urn:nbn:se:kth:diva-177839OAI: oai:DiVA.org:kth-177839DiVA: diva2:874490