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Photocurrent characterisation of germanium nanowires
KTH, School of Information and Communication Technology (ICT).
2013 (English)Independent thesis Advanced level (professional degree), 20 credits / 30 HE creditsStudent thesis
Abstract [en]

In the past decades, silicon and germanium have been investigated as a potential materials for active optical devices. Recent studies show that by applying adequate strain and n-doping, germanium can show sufficient optical gain for lasing. In this work, optical and electrical characterisation has been performed on strained and doped germanium, grown with the vaporliquid- solid technique. Fabrication of both Schottky and p-i-n junctions has been demonstrated and photocurrent spectroscopy has shown that strain on germanium nanowires can alter significantly the band structure of germanium.

Place, publisher, year, edition, pages
2013. , 43 p.
Series
TRITA-ICT-EX, 2013:80
National Category
Computer and Information Science
Identifiers
URN: urn:nbn:se:kth:diva-177839OAI: oai:DiVA.org:kth-177839DiVA: diva2:874490
Examiners
Available from: 2015-12-01 Created: 2015-11-27 Last updated: 2015-12-01Bibliographically approved

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CiteExportLink to record
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