Si-nanoparticle synthesis using ion implantation and MeV ion irradiation
2015 (English)In: Physica Status Solidi (C) Current Topics in Solid State Physics, ISSN 1862-6351Article in journal (Refereed) Published
A dielectric matrix with embedded Si-nanoparticles may show strong luminescence depending on nanoparticles size, surface properties, Si-excess concentration and matrix type. Ion implantation of Si ions with energies of a few tens to hundreds of keV in a SiO<inf>2</inf> matrix followed by thermal annealing was identified as a powerful method to form such nanoparticles. The aim of the present work is to optimize the synthesis of Si-nanoparticles produced by ion implantation in SiO<inf>2</inf> by employing MeV ion irradiation as an additional annealing process. The luminescence properties are measured by spectrally resolved photoluminescence including PL lifetime measurement, while X-ray reflectometry, atomic force microscopy and ion beam analysis are used to characterize the nanoparticle formation process. The results show that the samples implanted at 20%-Si excess atomic concentration display the highest luminescence and that irradiation of 36 MeV 127I ions affects the luminosity in terms of wavelength and intensity. It is also demonstrated that the nanoparticle luminescence lifetime decreases as a function of irradiation fluence.
Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2015.
Ion implantation, Ion irradiation, Silicon-nanoparticle, Atomic force microscopy, Iodine, Ion beams, Ion bombardment, Ions, Irradiation, Luminescence, Nanoparticles, Silicon, Silicon oxides, Additional annealing, Atomic concentration, Luminescence lifetime, Luminescence properties, Nanoparticle formation, Nanoparticles sizes, Silicon nanoparticles, Strong luminescence, Synthesis (chemical)
IdentifiersURN: urn:nbn:se:kth:diva-177766DOI: 10.1002/pssc.201510101OAI: oai:DiVA.org:kth-177766DiVA: diva2:874764
QC 201511272015-11-272015-11-252015-11-27Bibliographically approved