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Low-frequency noise characterization in ultra-low equivalent-oxide-thickness thulium silicate interfacial layer nMOSFETs
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-0333-376X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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2015 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 36, no 12, 1355-1358 p.Article in journal (Refereed) Published
Abstract [en]

Low-frequency noise measurements were performed on n-channel MOSFETs with a novel ultra-low 0.3nm EOT interfacial layer (TmSiO) and two different bulk high-k dielectrics (Tm2O3 and HfO2). The MOSFETs were fabricated in a gate-last process and the total gate stack EOT was 1.2 nm and 0.65 nm for the Tm2O3 and HfO2 samples respectively. In general both gate stacks resulted in 1/f type of noise spectra and noise levels comparable to conventional SiO2/HfO2 devices with similar EOTs. The extracted average effective oxide trap density was 2.5×1017 cm-3eV-1 and 1.5×1017 cm-3eV-1 for TmSiO/HfO2 and TmSiO/Tm2O3 respectively. Therefore the best noise performance was observed for the gate stack with Tm2O3 bulk high-k layer and we suggest that the interface free single layer ALD fabrication scheme could explain this.

Place, publisher, year, edition, pages
IEEE Press, 2015. Vol. 36, no 12, 1355-1358 p.
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-177909DOI: 10.1109/LED.2015.2494678ISI: 000365295300028Scopus ID: 2-s2.0-84959519144OAI: oai:DiVA.org:kth-177909DiVA: diva2:874934
Funder
EU, European Research Council, OSIRIS/228229
Note

QC 20151130

Available from: 2015-11-30 Created: 2015-11-30 Last updated: 2017-12-01Bibliographically approved
In thesis
1. Low-frequency noise in high-k gate stacks with interfacial layer engineering
Open this publication in new window or tab >>Low-frequency noise in high-k gate stacks with interfacial layer engineering
2015 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

The rapid progress of complementary-metal-oxide-semiconductor (CMOS) integrated circuit technology became feasible through continuous device scaling. The implementation of high-k/metal gates had a significantcontribution to this progress during the last decade. However, there are still challenges regarding the reliability of these devices. One of the main issues is the escalating 1/fnoise level, which leads to degradation of signal-to-noise ratio (SNR) in electronic circuits. The focus of this thesis is on low-frequency noise characterization and modeling of various novel CMOS devices. The devices include PtSi Schottky-barriers  for source/drain contactsand different high-kgatestacksusingHfO2, LaLuO3 and Tm2O3 with different interlayers. These devices vary in the high-k material, high-k thickness, high-k deposition method and interlayermaterial. Comprehensive electrical characterization and low-frequency noise characterization were performed on various devices at different operating conditions. The noise results were analyzed and models were suggested in order to investigate the origin of 1/f noise in these devices. Moreover, the results were compared to state-of-the-art devices.

High constant dielectrics limit the leakage current by offering a higher physical dielectric thickness while keeping the Equivalent Oxide Thickness (EOT) low. Yet, the 1/f noise increases due to higher number of traps in the dielectric and also deterioration of the interface with silicon compared to SiO2. Therefore, in order to improve the interface quality, applying an interfacial layer (IL) between the high-k layer and silicon is inevitable. Very thin, uniform insitu fabricated SiO2 interlayers with HfO2 high-k dielectric have been characterized. The required thickness of SiO2 as IL for further scaling has now reached below 0.5 nm. Thus, one of the main challenges at the current technology node is engineering the interfacial layer in order to achieve both high quality interface and low EOT. High-k ILs are therefore proposed to substitute SiOx dielectrics to fulfill this need. In this work, we have made the first experiments on low-frequency noise studies on TmSiO as a high-k interlayer with Tm2O3 or HfO2 on top as high-k dielectric. The TmSiO/Tm2O3 shows a lower level of noise which is suggested to be related to smoother interface between the TmSiO and Tm2O3. We have achieved excellentnoise performancefor TmSiO/Tm2O3 and TmSiO/HfO2 gate stacks which are comparableto state-of-the-art SiO2/HfO2 gate stacks.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2015. xv, 60 p.
Series
TRITA-ICT, 2015:21
Keyword
CMOS, high k, 1/ f noise, low-frequency noise, number fluctuations, mobility fluctuat ions, traps, interfacial layer, TmSiO, Tm 2O3
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Information and Communication Technology
Identifiers
urn:nbn:se:kth:diva-177911 (URN)978-91-7595-751-7 (ISBN)
Public defence
2015-12-18, Sal/hall C, Elektrum, KTH-ICT, Kista, 10:00 (English)
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Supervisors
Note

QC 20151130

Available from: 2015-11-30 Created: 2015-11-30 Last updated: 2015-11-30Bibliographically approved

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Dentoni Litta, EugenioHellström, Per-ErikMalm, Bengt Gunnar

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