Low-frequency noise characterization in ultra-low equivalent-oxide-thickness thulium silicate interfacial layer nMOSFETs
2015 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 36, no 12, 1355-1358 p.Article in journal (Refereed) Published
Low-frequency noise measurements were performed on n-channel MOSFETs with a novel ultra-low 0.3nm EOT interfacial layer (TmSiO) and two different bulk high-k dielectrics (Tm2O3 and HfO2). The MOSFETs were fabricated in a gate-last process and the total gate stack EOT was 1.2 nm and 0.65 nm for the Tm2O3 and HfO2 samples respectively. In general both gate stacks resulted in 1/f type of noise spectra and noise levels comparable to conventional SiO2/HfO2 devices with similar EOTs. The extracted average effective oxide trap density was 2.5×1017 cm-3eV-1 and 1.5×1017 cm-3eV-1 for TmSiO/HfO2 and TmSiO/Tm2O3 respectively. Therefore the best noise performance was observed for the gate stack with Tm2O3 bulk high-k layer and we suggest that the interface free single layer ALD fabrication scheme could explain this.
Place, publisher, year, edition, pages
IEEE Press, 2015. Vol. 36, no 12, 1355-1358 p.
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-177909DOI: 10.1109/LED.2015.2494678ISI: 000365295300028ScopusID: 2-s2.0-84959519144OAI: oai:DiVA.org:kth-177909DiVA: diva2:874934
FunderEU, European Research Council, OSIRIS/228229
QC 201511302015-11-302015-11-302015-12-18Bibliographically approved