Effects of 3 MeV protons on 4H-SiC bipolar devices and integrated OR-NOR gates
2013 (English)In: Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, IEEE conference proceedings, 2013Conference paper (Refereed)
In this paper, radiation effects of 3 MeV protons on 4H-SiC bipolar devices and integrated OR-NOR gates have been investigated. The chips were irradiated from a fluence of 1×108 cm-2 till 1×1013 cm-2. Up until a fluence of 1×1011 cm-2 both the bipolar devices and the logic gates were found to be stable, but for higher fluence they begin to degrade as a function of irradiation fluence. Using Technology Computer Aided Design (TCAD) simulation degradation of the transistor current gain have been found to be more dominated by surface traps than bulk defects. Simulation Program with Integrated Circuit Emphasis (SPICE) simulations on the logic circuits show that the gain degradation is the key contribution to the unstable performance of the circuits from the fluence of 1×1012 cm-2 and above.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2013.
4H-SiC, Bipolar integrated circuits, Emitter couple logic (ECL), OR-NOR gates, Proton radiation, Amplification, Computer aided design, Electronic design automation, Integrated circuits, Radiation effects, Silicon carbide, SPICE, Surface defects, Bipolar device, Gain degradations, NOR gates, Proton radiations, Simulation program with integrated circuit emphasis, Technology computer aided design, Logic circuits
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-176162DOI: 10.1109/RADECS.2013.6937433ISI: 000349119800080ScopusID: 2-s2.0-84949925002ISBN: 9781467350570OAI: oai:DiVA.org:kth-176162DiVA: diva2:874948
2013 14th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2013, 23 September - 27 September 2013
QC 201511302015-11-302015-11-022015-12-04Bibliographically approved