Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences
2015 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 62, no 11, 3876-3881 p.Article in journal (Refereed) Published
We present a detailed analysis of hot-carrier degradation (HCD) in graphene field-effect transistors (GFETs) and compare those findings with the bias-temperature instability (BTI). Our results show that the HCD in GFETs is recoverable, similar to its BTI counterpart. Moreover, both the degradation mechanisms strongly interact. Particular attention is paid to the dynamics of HCD recovery, which can be well fitted with the capture/emission time (CET) map model and the universal relaxation function for some stress conditions, quite similar to the BTI in both GFETs and Si technologies. The main result of this paper is an extension of our systematic method for benchmarking new graphene technologies for the case of HCD.
Place, publisher, year, edition, pages
IEEE , 2015. Vol. 62, no 11, 3876-3881 p.
Bias-temperature instability (BTI), graphene FETs (GFETs), hot-carrier degradation (HCD), reliability
Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-177949DOI: 10.1109/TED.2015.2480704ISI: 000364242000064ScopusID: 2-s2.0-84946142854OAI: oai:DiVA.org:kth-177949DiVA: diva2:876036
QC 201512022015-12-022015-11-302015-12-02Bibliographically approved