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Hot-Carrier Degradation and Bias-Temperature Instability in Single-Layer Graphene Field-Effect Transistors: Similarities and Differences
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-4637-8001
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-1234-6060
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
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2015 (English)In: IEEE Transactions on Electron Devices, ISSN 0018-9383, E-ISSN 1557-9646, Vol. 62, no 11, 3876-3881 p.Article in journal (Refereed) Published
Abstract [en]

We present a detailed analysis of hot-carrier degradation (HCD) in graphene field-effect transistors (GFETs) and compare those findings with the bias-temperature instability (BTI). Our results show that the HCD in GFETs is recoverable, similar to its BTI counterpart. Moreover, both the degradation mechanisms strongly interact. Particular attention is paid to the dynamics of HCD recovery, which can be well fitted with the capture/emission time (CET) map model and the universal relaxation function for some stress conditions, quite similar to the BTI in both GFETs and Si technologies. The main result of this paper is an extension of our systematic method for benchmarking new graphene technologies for the case of HCD.

Place, publisher, year, edition, pages
IEEE , 2015. Vol. 62, no 11, 3876-3881 p.
Keyword [en]
Bias-temperature instability (BTI), graphene FETs (GFETs), hot-carrier degradation (HCD), reliability
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-177949DOI: 10.1109/TED.2015.2480704ISI: 000364242000064Scopus ID: 2-s2.0-84946142854OAI: oai:DiVA.org:kth-177949DiVA: diva2:876036
Note

QC 20151202

Available from: 2015-12-02 Created: 2015-11-30 Last updated: 2017-12-01Bibliographically approved

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Vaziri, Sam

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