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Enhanced channel mobility at sub-nm EOT by integration of a TmSiO interfacial layer in HfO2/TiN high-k/metal gate MOSFETs
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-0333-376X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2015 (English)In: IEEE Journal of the Electron Devices Society, ISSN 2168-6734, Vol. 3, no 5, 397-404 p., 7120903Article in journal (Refereed) Published
Abstract [en]

Integration of a high-k interfacial layer (IL) is considered the leading technological solution to extend the scalability of Hf-based high-k/metal gate CMOS technology. We have previously shown that thulium silicate (TmSiO) IL can provide excellent electrical characteristics and enhanced channel mobility at sub-nm EOT. This paper presents a detailed analysis of channel mobility in TmSiO/HfO<inf>2</inf>/TiN MOSFETs, obtained through measurements at varying temperature and under constant voltage stress. We show experimentally for the first time that integration of a high-k IL can benefit mobility by attenuating remote phonon scattering. Specifically, integration of TmSiO results in attenuated remote phonon scattering compared to reference SiO<inf>x</inf>/HfO<inf>2</inf> dielectric stacks having the same EOT, whereas it has no significant influence on remote Coulomb scattering.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2015. Vol. 3, no 5, 397-404 p., 7120903
Keyword [en]
CMOS, EOT, HfO2, high-k, mobility, RCS, RPS, scattering, silicate, thulium, TmSiO, Carrier mobility, CMOS integrated circuits, Hafnium oxides, Integration, Phonon scattering, Phonons, Silicates, High- k, MOSFET devices
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-175057DOI: 10.1109/JEDS.2015.2443172ISI: 000369885000002Scopus ID: 2-s2.0-84940108352OAI: oai:DiVA.org:kth-175057DiVA: diva2:877397
Note

QC 20151207. QC 20160318

Available from: 2015-12-07 Created: 2015-10-09 Last updated: 2016-03-18Bibliographically approved

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Dentoni Litta, EugenioHellström, Per-Erik

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