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Enhanced channel mobility at sub-nm EOT by integration of a TmSiO interfacial layer in HfO2/TiN high-k/metal gate MOSFETs
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-0333-376X
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-6705-1660
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2015 (English)In: IEEE Journal of the Electron Devices Society, ISSN 2168-6734, Vol. 3, no 5, p. 397-404, article id 7120903Article in journal (Refereed) Published
Abstract [en]

Integration of a high-k interfacial layer (IL) is considered the leading technological solution to extend the scalability of Hf-based high-k/metal gate CMOS technology. We have previously shown that thulium silicate (TmSiO) IL can provide excellent electrical characteristics and enhanced channel mobility at sub-nm EOT. This paper presents a detailed analysis of channel mobility in TmSiO/HfO<inf>2</inf>/TiN MOSFETs, obtained through measurements at varying temperature and under constant voltage stress. We show experimentally for the first time that integration of a high-k IL can benefit mobility by attenuating remote phonon scattering. Specifically, integration of TmSiO results in attenuated remote phonon scattering compared to reference SiO<inf>x</inf>/HfO<inf>2</inf> dielectric stacks having the same EOT, whereas it has no significant influence on remote Coulomb scattering.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2015. Vol. 3, no 5, p. 397-404, article id 7120903
Keyword [en]
CMOS, EOT, HfO2, high-k, mobility, RCS, RPS, scattering, silicate, thulium, TmSiO, Carrier mobility, CMOS integrated circuits, Hafnium oxides, Integration, Phonon scattering, Phonons, Silicates, High- k, MOSFET devices
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-175057DOI: 10.1109/JEDS.2015.2443172ISI: 000369885000002Scopus ID: 2-s2.0-84940108352OAI: oai:DiVA.org:kth-175057DiVA, id: diva2:877397
Note

QC 20151207. QC 20160318

Available from: 2015-12-07 Created: 2015-10-09 Last updated: 2016-03-18Bibliographically approved

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Dentoni Litta, EugenioHellström, Per-Erik

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