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Modeling Temperature Dependence of fT in 4H-SiC Bipolar Transistors
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0003-3802-7834
2015 (English)Conference paper, Published paper (Other academic)
Abstract [en]

This paper models the temperature dependence of fT in 4H-SiC bipolar devices. The proposed model describes variation of the constituent parameters of fT as a function of temperature. The model assumes complete ionization of dopants in 4H-SiC. However, this assumption hampers the model’s utilityat temperatures below 300◦C. The model was simulated attemperatures between 300◦C and 700◦C and a drop in fT wasobserved. However, measurements are required to prove thecorrectness of the model or lack thereof.

Place, publisher, year, edition, pages
Linköping University Electronic Press, 2015.
National Category
Engineering and Technology
Identifiers
URN: urn:nbn:se:kth:diva-177520OAI: oai:DiVA.org:kth-177520DiVA: diva2:877898
Conference
Swedish System on Chip Conference (SSoCC), Gothenburg, May 4-5, 2015
Note

QC 20160318

Available from: 2015-12-08 Created: 2015-11-23 Last updated: 2016-03-18Bibliographically approved

Open Access in DiVA

fulltext(162 kB)117 downloads
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File name FULLTEXT01.pdfFile size 162 kBChecksum SHA-512
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Type fulltextMimetype application/pdf

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Rusu, Ana

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CiteExportLink to record
Permanent link

Direct link
Cite
Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
  • Other style
More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
  • nn-NB
  • sv-SE
  • Other locale
More languages
Output format
  • html
  • text
  • asciidoc
  • rtf