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High-efficiency three-phase inverter with SiC MOSFET power modules for motor-drive applications
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0001-6184-6470
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0001-7922-3407
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0003-0570-9599
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2014 (English)Conference paper (Refereed)
Abstract [en]

This paper presents the design process of a 312 kVA three-phase silicon carbide inverter using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power modules in each phase-leg. The design processes of the gate-drive circuits with short-circuit protection and the power circuit layout are also presented. Electrical measurements in order to evaluate the performance of the gate-drive circuits have been performed using a double-pulse setup. Experimental results showing the electrical performance during steady-state operation of the power converter are also shown. Taking into account measured data, an efficiency of approximately 99.3% at the rated power has been estimated for the inverter.

Place, publisher, year, edition, pages
IEEE conference proceedings, 2014. 468-474 p.
Keyword [en]
AC motors, Digital storage, Electric drives, Electric power systems, Electron beam lithography, Field effect transistors, Metals, MOS devices, MOSFET devices, Semiconducting silicon, Silicon carbide, Electrical measurement, Electrical performance, Gate drive circuits, Motor drive applications, Parallel-connected, Short-circuit protection, Steady-state operation, Three-phase inverter, Electric inverters
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
SRA - Energy
Identifiers
URN: urn:nbn:se:kth:diva-174817DOI: 10.1109/ECCE.2014.6953431ScopusID: 2-s2.0-84934312282ISBN: 9781479956982OAI: oai:DiVA.org:kth-174817DiVA: diva2:881645
Conference
2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014
Funder
StandUp
Note

QC 20151211

Available from: 2015-12-11 Created: 2015-10-07 Last updated: 2016-09-16Bibliographically approved
In thesis
1. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
Open this publication in new window or tab >>Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
2016 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. Two different gate-driver designs for SiC power devices are presented. First, a dual-function gate-driver for a power module populated with SiC junction field-effect transistors that finds a trade-off between fast switching speeds and a low oscillative performance has been presented and experimentally verified. Second, a gate-driver for SiC metal-oxide semiconductor field-effect transistors with a short-circuit protection scheme that is able to protect the converter against short-circuit conditions without compromising the switching performance during normal operation is presented and experimentally validated. The benefits and issues of using parallel-connection as the design strategy for high-efficiency and high-power converters have been presented. In order to evaluate parallel connection, a 312 kVA three-phase SiC inverter with an efficiency of 99.3 % has been designed, built, and experimentally verified. If parallel connection is chosen as design direction, an undesired trade-off between reliability and efficiency is introduced. A reliability analysis has been performed, which has shown that the gate-source voltage stress determines the reliability of the entire system. Decreasing the positive gate-source voltage could increase the reliability without significantly affecting the efficiency. If high-temperature applications are considered, relatively little attention has been paid to passive components for harsh environments. This thesis also addresses high-temperature operation. The high-temperature performance of two different designs of inductors have been tested up to 600_C. Finally, a GaN power field-effect transistor was characterized down to cryogenic temperatures. An 85 % reduction of the on-state resistance was measured at −195_C. Finally, an experimental evaluation of a 1 kW singlephase inverter at low temperatures was performed. A 33 % reduction in losses compared to room temperature was achieved at rated power.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2016. 101 p.
Series
TRITA-EE, ISSN 1653-5146 ; 2016:145
Keyword
Cryogenic, Gallium Nitride, Gate Driver, Harsh Environments, High Efficiency Converter, High Temperature, MOSFETs, Normally- ON JFETs, Reliability, Silicon Carbide, Wide-Band Gap Semiconductors
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-192626 (URN)978-91-7729-109-1 (ISBN)
Public defence
2016-10-14, Kollegiesalen, Brinellvägen 8, KTH-huset, KTH, Stockholm, 09:53 (English)
Opponent
Supervisors
Note

QC 20160922

Available from: 2016-09-22 Created: 2016-09-16 Last updated: 2016-09-22Bibliographically approved

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