High-efficiency three-phase inverter with SiC MOSFET power modules for motor-drive applications
2014 (English)Conference paper (Refereed)
This paper presents the design process of a 312 kVA three-phase silicon carbide inverter using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power modules in each phase-leg. The design processes of the gate-drive circuits with short-circuit protection and the power circuit layout are also presented. Electrical measurements in order to evaluate the performance of the gate-drive circuits have been performed using a double-pulse setup. Experimental results showing the electrical performance during steady-state operation of the power converter are also shown. Taking into account measured data, an efficiency of approximately 99.3% at the rated power has been estimated for the inverter.
Place, publisher, year, edition, pages
IEEE conference proceedings, 2014. 468-474 p.
AC motors, Digital storage, Electric drives, Electric power systems, Electron beam lithography, Field effect transistors, Metals, MOS devices, MOSFET devices, Semiconducting silicon, Silicon carbide, Electrical measurement, Electrical performance, Gate drive circuits, Motor drive applications, Parallel-connected, Short-circuit protection, Steady-state operation, Three-phase inverter, Electric inverters
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject SRA - Energy
IdentifiersURN: urn:nbn:se:kth:diva-174817DOI: 10.1109/ECCE.2014.6953431ScopusID: 2-s2.0-84934312282ISBN: 9781479956982OAI: oai:DiVA.org:kth-174817DiVA: diva2:881645
2014 IEEE Energy Conversion Congress and Exposition, ECCE 2014
QC 201512112015-12-112015-10-072016-09-16Bibliographically approved