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A checkerboard selective absorber with excellent spectral selectivity
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2015 (English)In: Journal of Applied Physics, ISSN 0021-8979, E-ISSN 1089-7550, Vol. 118, no 18, 183103Article in journal (Refereed) PublishedText
Abstract [en]

A selective absorber with excellent spectral selectivity is proposed and analyzed. The absorber is based on a germanium (Ge) checkerboard on top of a tantalum (Ta) substrate. At wavelengths shorter than the 1.2 mu m cutoff, a very high absorption is achieved due to strong cavity resonances in the Ge nanosquares, and their interactions with adjacent nanocavities and the bottom Ta substrate. At longer wavelengths, absorption is greatly suppressed due to destructive interference between the transparent checkerboard layer and the highly reflective Ta substrate. To better describe the superior selectivity of our configuration, a new figure of merit (FOM) is introduced. We observe a FOM value of 0.88 compared to 0.69 for its planar counterpart. We also conduct a thermal analysis to verify the excellent selectivity of our absorber. A high temperature can be achieved and maintained, promising good potential for applications in solar thermophotovoltaic systems.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2015. Vol. 118, no 18, 183103
Keyword [en]
Dioxide Thin-Films, Light-Absorption, Energy-Conversion, Photonic Crystals, Solar-Cells, Efficiency, Silicon, Metamaterials, Systems, Metal
National Category
Atom and Molecular Physics and Optics Condensed Matter Physics
URN: urn:nbn:se:kth:diva-179162DOI: 10.1063/1.4935280ISI: 000365041700003OAI: diva2:883249

QC 20151216

Available from: 2015-12-16 Created: 2015-12-11 Last updated: 2015-12-16Bibliographically approved

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He, Sailing
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Electromagnetic Engineering
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