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Towards a new class of heavy ion doped magnetic semiconductors for room temperature applications
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2015 (English)In: Scientific Reports, ISSN 2045-2322, E-ISSN 2045-2322, Vol. 5, 17053Article in journal (Refereed) PublishedText
Abstract [en]

The article presents, using Bi doped ZnO, an example of a heavy ion doped oxide semiconductor, highlighting a novel p-symmetry interaction of the electronic states to stabilize ferromagnetism. The study includes both ab initio theory and experiments, which yield clear evidence for above room temperature ferromagnetism. ZnBixO1-x thin films are grown using the pulsed laser deposition technique. The room temperature ferromagnetism finds its origin in the holes introduced by the Bi doping and the p-p coupling between Bi and the host atoms. A sizeable magnetic moment is measured by means of x-ray magnetic circular dichroism at the O K-edge, probing directly the spin polarization of the O(2p) states. This result is in agreement with the theoretical predictions and inductive magnetometry measurements. Ab initio calculations of the electronic and magnetic structure of ZnBixO1-x at various doping levels allow to trace the origin of the ferromagnetic character of this material. It appears, that the spin-orbit energy of the heavy ion Bi stabilizes the ferromagnetic phase. Thus, ZnBixO1-x doped with a heavy non-ferromagnetic element, such as Bi, is a credible example of a candidate material for a new class of compounds for spintronics applications, based on the spin polarization of the p states.

Place, publisher, year, edition, pages
Nature Publishing Group, 2015. Vol. 5, 17053
Keyword [en]
Pulsed-Laser Deposition, Augmented-Wave Method, Zno Thin-Films, Ferromagnetism, Transition, Model
National Category
Condensed Matter Physics
URN: urn:nbn:se:kth:diva-179161DOI: 10.1038/srep17053ISI: 000365093400001PubMedID: 26592564ScopusID: 2-s2.0-84947967563OAI: diva2:883263

QC 20151216

Available from: 2015-12-16 Created: 2015-12-11 Last updated: 2015-12-16Bibliographically approved

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Ahuja, Rajeev
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School of Industrial Engineering and Management (ITM)
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