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Properties of sub-band edge states in AlInN studied by time-resolved photoluminescence of a AlInN/GaN heterostructure
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.ORCID iD: 0000-0002-4606-4865
2015 (English)In: Semiconductor Science and Technology, ISSN 0268-1242, E-ISSN 1361-6641, Vol. 30, no 11, 115017Article in journal (Refereed) PublishedText
Abstract [en]

Time-resolved photoluminescence (PL) measurements of Al0.82In0.18N/GaN heterostructures revealed a large enhancement of low temperature PL from the GaN layer and a strong temperature dependence of this effect. Analysis of different phenomena that might affect the photoexcited carrier dynamics suggests that the enhanced GaN PL should be attributed to photoexcited hole transfer from the AlInN layer. The hole transport most probably takes place via dense sub-band edge valence band states related to nanoscale In-rich clusters. Scanning near-field optical microscopy data support this assignment.

Place, publisher, year, edition, pages
2015. Vol. 30, no 11, 115017
Keyword [en]
AlInN, InAlN, nitride heterostructure, time-resolved photoluminescence, scanning near-field optical microscopy, SNOM
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-179610DOI: 10.1088/0268-1242/30/11/115017ISI: 000365240800034ScopusID: 2-s2.0-84945550508OAI: oai:DiVA.org:kth-179610DiVA: diva2:893060
Funder
Swedish Energy Agency, 36652-1
Note

QC 20160112

Available from: 2016-01-12 Created: 2015-12-17 Last updated: 2016-01-12Bibliographically approved

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Marcinkevicius, Saulius
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