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High-Efficiency 312-kVA Three-Phase Inverter Using Parallel Connection of Silicon Carbide MOSFET Power Modules
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0001-6184-6470
KTH, School of Electrical Engineering (EES), Electrical Energy Conversion.ORCID iD: 0000-0003-0570-9599
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2015 (English)In: IEEE transactions on industry applications, ISSN 0093-9994, E-ISSN 1939-9367, Vol. 51, no 6, 4664-4676 p.Article in journal (Refereed) PublishedText
Abstract [en]

This paper presents the design process of a 312-kVA three-phase silicon carbide inverter using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power modules in each phase leg. The design processes of the gate-drive circuits with short-circuit protection and power circuit layout are also presented. Measurements in order to evaluate the performance of the gate-drive circuits have been performed using a double-pulse setup. Moreover, electrical and thermal measurements in order to evaluate the transient performance and steady-state operation of the parallel-connected power modules are shown. Experimental results showing proper steady-state operation of the power converter are also presented. Taking into account measured data, an efficiency of approximately 99.3% at the rated power has been measured for the inverter.

Place, publisher, year, edition, pages
IEEE , 2015. Vol. 51, no 6, 4664-4676 p.
Keyword [en]
Inverter, metal-oxide-semiconductor field-effect transistors (MOSFETs), parallel connection, power module, silicon carbide (SiC)
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
SRA - Energy
Identifiers
URN: urn:nbn:se:kth:diva-180146DOI: 10.1109/TIA.2015.2456422ISI: 000365415700033ScopusID: 2-s2.0-84957922544OAI: oai:DiVA.org:kth-180146DiVA: diva2:893747
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QC 20160113

Available from: 2016-01-13 Created: 2016-01-07 Last updated: 2016-09-16Bibliographically approved
In thesis
1. Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
Open this publication in new window or tab >>Extreme Implementations of Wide-Bandgap Semiconductors in Power Electronics
2016 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Wide-bandgap (WBG) semiconductor materials such as silicon carbide (SiC) and gallium-nitride (GaN) allow higher voltage ratings, lower on-state voltage drops, higher switching frequencies, and higher maximum temperatures. All these advantages make them an attractive choice when high-power density and high-efficiency converters are targeted. Two different gate-driver designs for SiC power devices are presented. First, a dual-function gate-driver for a power module populated with SiC junction field-effect transistors that finds a trade-off between fast switching speeds and a low oscillative performance has been presented and experimentally verified. Second, a gate-driver for SiC metal-oxide semiconductor field-effect transistors with a short-circuit protection scheme that is able to protect the converter against short-circuit conditions without compromising the switching performance during normal operation is presented and experimentally validated. The benefits and issues of using parallel-connection as the design strategy for high-efficiency and high-power converters have been presented. In order to evaluate parallel connection, a 312 kVA three-phase SiC inverter with an efficiency of 99.3 % has been designed, built, and experimentally verified. If parallel connection is chosen as design direction, an undesired trade-off between reliability and efficiency is introduced. A reliability analysis has been performed, which has shown that the gate-source voltage stress determines the reliability of the entire system. Decreasing the positive gate-source voltage could increase the reliability without significantly affecting the efficiency. If high-temperature applications are considered, relatively little attention has been paid to passive components for harsh environments. This thesis also addresses high-temperature operation. The high-temperature performance of two different designs of inductors have been tested up to 600_C. Finally, a GaN power field-effect transistor was characterized down to cryogenic temperatures. An 85 % reduction of the on-state resistance was measured at −195_C. Finally, an experimental evaluation of a 1 kW singlephase inverter at low temperatures was performed. A 33 % reduction in losses compared to room temperature was achieved at rated power.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2016. 101 p.
Series
TRITA-EE, ISSN 1653-5146 ; 2016:145
Keyword
Cryogenic, Gallium Nitride, Gate Driver, Harsh Environments, High Efficiency Converter, High Temperature, MOSFETs, Normally- ON JFETs, Reliability, Silicon Carbide, Wide-Band Gap Semiconductors
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
Electrical Engineering
Identifiers
urn:nbn:se:kth:diva-192626 (URN)978-91-7729-109-1 (ISBN)
Public defence
2016-10-14, Kollegiesalen, Brinellvägen 8, KTH-huset, KTH, Stockholm, 09:53 (English)
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QC 20160922

Available from: 2016-09-22 Created: 2016-09-16 Last updated: 2016-09-22Bibliographically approved

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