High-Efficiency 312-kVA Three-Phase Inverter Using Parallel Connection of Silicon Carbide MOSFET Power Modules
2015 (English)In: IEEE transactions on industry applications, ISSN 0093-9994, E-ISSN 1939-9367, Vol. 51, no 6, 4664-4676 p.Article in journal (Refereed) PublishedText
This paper presents the design process of a 312-kVA three-phase silicon carbide inverter using ten parallel-connected metal-oxide-semiconductor field-effect-transistor power modules in each phase leg. The design processes of the gate-drive circuits with short-circuit protection and power circuit layout are also presented. Measurements in order to evaluate the performance of the gate-drive circuits have been performed using a double-pulse setup. Moreover, electrical and thermal measurements in order to evaluate the transient performance and steady-state operation of the parallel-connected power modules are shown. Experimental results showing proper steady-state operation of the power converter are also presented. Taking into account measured data, an efficiency of approximately 99.3% at the rated power has been measured for the inverter.
Place, publisher, year, edition, pages
IEEE , 2015. Vol. 51, no 6, 4664-4676 p.
Inverter, metal-oxide-semiconductor field-effect transistors (MOSFETs), parallel connection, power module, silicon carbide (SiC)
Electrical Engineering, Electronic Engineering, Information Engineering
Research subject SRA - Energy
IdentifiersURN: urn:nbn:se:kth:diva-180146DOI: 10.1109/TIA.2015.2456422ISI: 000365415700033ScopusID: 2-s2.0-84957922544OAI: oai:DiVA.org:kth-180146DiVA: diva2:893747
QC 201601132016-01-132016-01-072016-09-16Bibliographically approved