Impact of carrier localization on radiative recombination times in semipolar (2021) plane InGaN/GaN quantum wells
2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 107, no 21, 211109Article in journal (Refereed) PublishedText
Semipolar (20 (2) over bar1) plane In,Ga1-xN quantum wells (QWs) of varying alloy composition were studied by time-resolved photoluminescence. A large difference in effective radiative lifetimes. from sub-ns for x = 0.11 to similar to 30 ns for x approximate to 0.35 was found. This effect is attributed to different properties of carrier localization. In low In content QWs. recombination at extended states with short recombination times is prevalent. In QWs with a high In content, the lifetimes are increased by localization of electrons and holes at separate sites. The zigzag shape of the QW interfaces and the resulting in-plane electric field are proposed as the cause for the separate electron and hole localization.
Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2015. Vol. 107, no 21, 211109
IdentifiersURN: urn:nbn:se:kth:diva-180129DOI: 10.1063/1.4936386ISI: 000365677500009ScopusID: 2-s2.0-84948451946OAI: oai:DiVA.org:kth-180129DiVA: diva2:894066
QC 201601142016-01-142016-01-072016-01-14Bibliographically approved