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Impact of carrier localization on radiative recombination times in semipolar (2021) plane InGaN/GaN quantum wells
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.ORCID iD: 0000-0002-4606-4865
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2015 (English)In: Applied Physics Letters, ISSN 0003-6951, E-ISSN 1077-3118, Vol. 107, no 21, 211109Article in journal (Refereed) PublishedText
Abstract [en]

Semipolar (20 (2) over bar1) plane In,Ga1-xN quantum wells (QWs) of varying alloy composition were studied by time-resolved photoluminescence. A large difference in effective radiative lifetimes. from sub-ns for x = 0.11 to similar to 30 ns for x approximate to 0.35 was found. This effect is attributed to different properties of carrier localization. In low In content QWs. recombination at extended states with short recombination times is prevalent. In QWs with a high In content, the lifetimes are increased by localization of electrons and holes at separate sites. The zigzag shape of the QW interfaces and the resulting in-plane electric field are proposed as the cause for the separate electron and hole localization.

Place, publisher, year, edition, pages
American Institute of Physics (AIP), 2015. Vol. 107, no 21, 211109
National Category
Physical Sciences
URN: urn:nbn:se:kth:diva-180129DOI: 10.1063/1.4936386ISI: 000365677500009ScopusID: 2-s2.0-84948451946OAI: diva2:894066

QC 20160114

Available from: 2016-01-14 Created: 2016-01-07 Last updated: 2016-01-14Bibliographically approved

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Ivanov, RuslanMarcinkevicius, Saulius
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