Going ballistic: Graphene hot electron transistors
2015 (English)In: Solid State Communications, ISSN 0038-1098, E-ISSN 1879-2766, Vol. 224, 64-75 p.Article in journal (Refereed) PublishedText
This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance.
Place, publisher, year, edition, pages
Elsevier, 2015. Vol. 224, 64-75 p.
Graphene, Hot electron transistors graphene base transistor, GBT, HBT, Ballistic transport, NEGF
IdentifiersURN: urn:nbn:se:kth:diva-180239DOI: 10.1016/j.ssc.2015.08.012ISI: 000366070300013ScopusID: 2-s2.0-84947603528OAI: oai:DiVA.org:kth-180239DiVA: diva2:895050
QC 201601182016-01-182016-01-082016-05-03Bibliographically approved