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Proposal of a broadband, polarization-insensitive and high-efficiency hot-carrier schottky photodetector integrated with a plasmonic silicon ridge waveguide
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2015 (English)In: Journal of Optics, ISSN 2040-8978, E-ISSN 2040-8986, Vol. 17, no 12, 125010Article in journal (Refereed) PublishedText
Abstract [en]

We propose a broadband, polarization-insensitive and high-efficiency plasmonic Schottky diode for detection of sub-bandgap photons in the optical communication wavelength range through internal photoemission (IPE). The distinctive features of this design are that it has a gold film covering both the top and the sidewalls of a dielectric silicon ridge waveguide with the Schottky contact formed at the gold-silicon interface and the sidewall coverage of gold can be easily tuned by an insulating layer. An extensive physical model on IPE of hot carriers is presented in detail and is applied to calculate and examine the performance of this detector. In comparison with a diode having only the top gold contact, the polarization sensitivity of the responsivity is greatly minimized in our photodetector with gold film covering both the top and the sidewall. Much higher responsivities for both polarizations are also achieved over a broad wavelength range of 1.2-1.6 mu m. Moreover, the Schottky contact is only 4 mu m long, leading to a very small dark current. Our design is very promising for practical applications in high-density silicon photonic integration.

Place, publisher, year, edition, pages
Institute of Physics Publishing (IOPP), 2015. Vol. 17, no 12, 125010
Keyword [en]
silicon, photodetectors, surface plasmons
National Category
Atom and Molecular Physics and Optics
Identifiers
URN: urn:nbn:se:kth:diva-180509DOI: 10.1088/2040-8978/17/12/125010ISI: 000366375700013ScopusID: 2-s2.0-84947976112OAI: oai:DiVA.org:kth-180509DiVA: diva2:895668
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QC 20160119

Available from: 2016-01-19 Created: 2016-01-14 Last updated: 2016-01-19Bibliographically approved

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He, Sailing
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Electromagnetic Engineering
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