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Low-Frequency Noise in Si-Based High-Speed Bipolar Transistors
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2001 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Kista: Mikroelektronik och informationsteknik , 2001. , xii, 58 p.
Series
Trita-EKT, ISSN 1650-8599 ; 2001:4
Keyword [en]
bipolar junction transistor (BJT), heterojunction bipolar transistor (HBT), silicon-germanium (SiGe), polysilicon emitter, high-frequency measurement, low-frequency noise, noise modeling, hydrogen passivation, voltage controlled oscillator (VCO), pha
Identifiers
URN: urn:nbn:se:kth:diva-3203ISBN: OAI: oai:DiVA.org:kth-3203DiVA: diva2:8980
Public defence
2001-08-31
Note
NR 20140805Available from: 2001-08-08 Created: 2001-08-08Bibliographically approved

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fulltext(1430 kB)900 downloads
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b99d64f68e2e02b96b91bf43e013ae685662608b7579b14a20ffea4e34624281f35755e1
Type fulltextMimetype application/pdf

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Microelectronics and Information Technology, IMIT

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CiteExportLink to record
Permanent link

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Citation style
  • apa
  • harvard1
  • ieee
  • modern-language-association-8th-edition
  • vancouver
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More styles
Language
  • de-DE
  • en-GB
  • en-US
  • fi-FI
  • nn-NO
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Output format
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