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Capacitance Spectroscopy of Point Defects in Silicon and Silicon Carbide
KTH, Superseded Departments, Microelectronics and Information Technology, IMIT.
2001 (English)Doctoral thesis, comprehensive summary (Other scientific)
Place, publisher, year, edition, pages
Kista: Mikroelektronik och informationsteknik , 2001. , vii, 41 p.
Trita-FTE, ISSN 0284-0545 ; 2001:5
Keyword [en]
capacitance spectrocopy, deep levels, deep level transient spectroscopy, thermal donors, thermal double donors, ultra shallow thermal donors, chemical kinetics, silicon carbide, ion implantation, implantation induced defects, implantation induced pas
URN: urn:nbn:se:kth:diva-3205ISBN: OAI: diva2:8982
Public defence
NR 20140805Available from: 2001-08-29 Created: 2001-08-29Bibliographically approved

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