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Nanoscale Surface Plasmon Polariton Disk Resonators, a Theoretical Analysis
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO. Zhejiang University, Hangzhou, China. (FMI FOTONIK O MIKROVÅGSTEKNIK)ORCID iD: 0000-0003-3618-6049
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO. Zhejiang University, Hangzhou, China. (FMI FOTONIK O MIKROVÅGSTEKNIK)ORCID iD: 0000-0001-5967-2651
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO. Zhejiang University, Hangzhou, China. (FMI FOTONIK O MIKROVÅGSTEKNIK)
2016 (English)In: IEEE Journal of Selected Topics in Quantum Electronics, ISSN 1077-260X, E-ISSN 1558-4542, Vol. 22, no 2Article in journal (Refereed) Published
Resource type
Text
Abstract [en]

We analyze whispering gallery-type disk resonators with radii down to 50 nm. Single interface waveguiding is accomplished by a plasmonic-dielectric interface operating near the surface plasmon polariton (SPP) resonance, employing a hypothetical material with lower loss than what is currently available in metals or negative permittivity media. The disk is immersed in a second dielectric, nonresonant to the plasmonic medium. Due to the high effective index of the disk mode and the concomitant low radiation losses, the quality (Q) values of the resonator are solely determined by material losses, in contrast to more conventional nanoscale resonators. We calculate the dependence of the effective indices of the guided mode, the Q values of absorption and radiation, and the Purcell factor on the deviation from the SPP resonance.

Place, publisher, year, edition, pages
IEEE , 2016. Vol. 22, no 2
Keyword [en]
Integrated optics, optical resonators, plasmons
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-180910DOI: 10.1109/JSTQE.2015.2479924ISI: 000364842500001Scopus ID: 2-s2.0-84946761408OAI: oai:DiVA.org:kth-180910DiVA: diva2:898680
Funder
Swedish Research Council
Note

QC 20160129

Available from: 2016-01-29 Created: 2016-01-25 Last updated: 2017-04-27Bibliographically approved
In thesis
1. Hybrid Plasmonic Devices for Optical Communication and Sensing
Open this publication in new window or tab >>Hybrid Plasmonic Devices for Optical Communication and Sensing
2017 (English)Doctoral thesis, comprehensive summary (Other academic)
Abstract [en]

Hybrid plasmonic (HP) waveguides, a multi-layer waveguide structure supporting a hybrid mode of surface plasmonics and Si photonics, is a compromise way to integrate plasmonic materials into Si or SOI platforms, which can guide optical waves of sub-wavelength size, and with relative low propagation loss. In this thesis, several HP waveguides and devices are developed for the purposes of optical communications and sensing. The single-slot HP ring resonator sensor with 2.6µm radius can give a quality factor (factor) of 1300 at the communication wavelength of 1.5µm with a device sensitivity of 102nm/RIU (refractive index unit). The Mach-Zehnder interferometer (MZI) with a 40µm double-slot HP waveguide has a device sensitivity around 474nm/RIU. The partly open silicon side-coupled double-slot HP ring resonator has a device sensitivity of 687.5nm/RIU, with a Q factor over 1000 after optimization. Further, an all-optical switching HP donut resonator with a photothermal plasmonic absorber is developed, utilizing the thermal expansion effect of silicon to shift the resonant peak of the HP resonator. The active area has a radius of 10µm to match the core size of a single-mode fiber. By applying 10mW power of the driving laser to the absorber, the resonator transmitted power can be changed by 15dB, with an average response time of 16µs. Using the same fabrication flow, and removing the oxide materials using hydrogen fluoride wet etching, a hollow HP waveguide is fabricated for liquid sensing applications. The experimentally demonstrated waveguide sensitivity is about 0.68, which is more than twice that of pure Si waveguide device. Microelectromechanical systems (MEMS) can also be integrated into vertical HP waveguides. By tuning the thickness of the air gap, over 20dB transmitted power change was experimentally demonstrated. This can be used for optical switching applications by either changing the absorption or phase of the HP devices.

Place, publisher, year, edition, pages
Stockholm: KTH Royal Institute of Technology, 2017. 74 p.
Series
TRITA-FYS, ISSN 0280-316X ; 2017:24
National Category
Telecommunications Nano Technology
Research subject
Physics
Identifiers
urn:nbn:se:kth:diva-205974 (URN)978-91-7729-365-1 (ISBN)
Public defence
2017-05-22, Sal C, Electrum, Kistagången 16, Kista, 10:00 (English)
Opponent
Supervisors
Note

QC 20170427

Available from: 2017-04-27 Created: 2017-04-25 Last updated: 2017-04-28Bibliographically approved

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Sun, XuWosinski, Lech

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