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Scalable Fabrication of 2D Semiconducting Crystals for Future Electronics
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-6430-6135
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
2015 (English)In: ELECTRONICS, ISSN 2079-9292, Vol. 4, no 4, 1033-1061 p.Article, review/survey (Refereed) PublishedText
Abstract [en]

Two-dimensional (2D) layered materials are anticipated to be promising for future electronics. However, their electronic applications are severely restricted by the availability of such materials with high quality and at a large scale. In this review, we introduce systematically versatile scalable synthesis techniques in the literature for high-crystallinity large-area 2D semiconducting materials, especially transition metal dichalcogenides, and 2D material-based advanced structures, such as 2D alloys, 2D heterostructures and 2D material devices engineered at the wafer scale. Systematic comparison among different techniques is conducted with respect to device performance. The present status and the perspective for future electronics are discussed.

Place, publisher, year, edition, pages
MDPI , 2015. Vol. 4, no 4, 1033-1061 p.
Keyword [en]
2D materials, transition metal dichalcogenides, field effect transistors, scalable synthesis, vapor phase deposition, 2D semiconducting alloys, 2D heterostructures, selective growth, multi-level stacked devices
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-181388DOI: 10.3390/electronics4041033ISI: 000367793000019ScopusID: 2-s2.0-84958176858OAI: oai:DiVA.org:kth-181388DiVA: diva2:899427
Note

QC 20160201

Available from: 2016-02-01 Created: 2016-02-01 Last updated: 2016-02-01Bibliographically approved

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