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Experimental evaluation of carrier transport, gain, T0 and chirp of 1.55 mm MQW structures with different barrier compositions
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.ORCID iD: 0000-0003-3056-4678
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.ORCID iD: 0000-0002-4606-4865
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics.
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2005 (English)In: 31st European Conference on Optical Communications (ECOC 2005), 2005, Institution of Engineering and Technology, 2005, Vol. 2005, no CP502, 297-298 p.Conference paper, Published paper (Refereed)
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Text
Abstract [en]

Direct carrier transport measurements were performed for different InGaAsP/InGaAlAs MQW test structures. Shallow InGaAlAs barrier QW showed faster carrier transport. Semi-insulating regrown FP lasers with InGaAlAs barrier QW showed improved high temperature operation, modal gain, differential modal gain and chirp.

Place, publisher, year, edition, pages
Institution of Engineering and Technology, 2005. Vol. 2005, no CP502, 297-298 p.
Keyword [en]
High temperature operations, Optical communication, Barrier compositions; Experimental evaluation; FP laser; InGaAlAs; Modal gain; Semi-insulating; Test structure; Transport measurements, Carrier transport
National Category
Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-180878DOI: 10.1049/cp:20050486Scopus ID: 2-s2.0-84951149782OAI: oai:DiVA.org:kth-180878DiVA: diva2:899633
Conference
31st European Conference on Optical Communications (ECOC 2005)25-29 Sept. 2005, Glasgow
Note

QC 20160202

Available from: 2016-02-02 Created: 2016-01-25 Last updated: 2016-02-02Bibliographically approved

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Schatz, RichardMarcinkevicius, SauliusKjebon, Olle
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CiteExportLink to record
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Citation style
  • apa
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