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Ultrafast photoconductors from low-temperature MOCVD-Grown GaAs and InGaAs epitaxial layers
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1994 (English)In: Applied Physics A: Materials Science & Processing, ISSN 0947-8396, E-ISSN 1432-0630, Vol. 58, no 2, 177-181 p.Article in journal (Refereed) Published
Place, publisher, year, edition, pages
1994. Vol. 58, no 2, 177-181 p.
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Atom and Molecular Physics and Optics
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URN: urn:nbn:se:kth:diva-181722OAI: oai:DiVA.org:kth-181722DiVA: diva2:899937
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NR 20160215

Available from: 2016-02-02 Created: 2016-02-02 Last updated: 2016-02-15Bibliographically approved

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Pasiskevicius, Valdas
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