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Properties of near-field photoluminescence in green emitting single and multiple semipolar (2021) plane InGaN/GaN quantum wells
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.ORCID iD: 0000-0002-5007-6893
KTH, School of Information and Communication Technology (ICT), Materials- and Nano Physics, Optics and Photonics, OFO.ORCID iD: 0000-0002-4606-4865
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2016 (English)In: Optical Materials Express, ISSN 2159-3930, E-ISSN 2159-3930, Vol. 6, no 1, 39-45 p.Article in journal (Refereed) Published
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Abstract [en]

Scanning near-field photoluminescence (PL) spectroscopy has been applied to green emitting (2021) plane InGaN/GaN quantum well (QW) structures with 1, 5 and 10 wells to reveal the influence of the number of QWS on PL properties and their spatial variation. The data show no additional broadening or shift of the PL spectra related to the increase of the number of QWs. The QWs in the multiple QW structures are found to be nearly identical and the well width and/or alloy composition fluctuations uncorrelated. In spite that the thickness of the 10 QW structure is over the critical, no PL changes related to a structural relaxation have been detected.

Place, publisher, year, edition, pages
Optical Society of America, 2016. Vol. 6, no 1, 39-45 p.
National Category
Condensed Matter Physics
Identifiers
URN: urn:nbn:se:kth:diva-181453DOI: 10.1364/OME.6.000039ISI: 000369242300005Scopus ID: 2-s2.0-84953455911OAI: oai:DiVA.org:kth-181453DiVA: diva2:900166
Funder
Swedish Energy Agency
Note

QC 20160203. QC 20160304

Available from: 2016-02-03 Created: 2016-02-02 Last updated: 2017-09-19Bibliographically approved

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