Properties of near-field photoluminescence in green emitting single and multiple semipolar (2021) plane InGaN/GaN quantum wells
2016 (English)In: Optical Materials Express, ISSN 2159-3930, E-ISSN 2159-3930, Vol. 6, no 1, 39-45 p.Article in journal (Refereed) PublishedText
Scanning near-field photoluminescence (PL) spectroscopy has been applied to green emitting (2021) plane InGaN/GaN quantum well (QW) structures with 1, 5 and 10 wells to reveal the influence of the number of QWS on PL properties and their spatial variation. The data show no additional broadening or shift of the PL spectra related to the increase of the number of QWs. The QWs in the multiple QW structures are found to be nearly identical and the well width and/or alloy composition fluctuations uncorrelated. In spite that the thickness of the 10 QW structure is over the critical, no PL changes related to a structural relaxation have been detected.
Place, publisher, year, edition, pages
Optical Society of America, 2016. Vol. 6, no 1, 39-45 p.
Condensed Matter Physics
IdentifiersURN: urn:nbn:se:kth:diva-181453DOI: 10.1364/OME.6.000039ISI: 000369242300005ScopusID: 2-s2.0-84953455911OAI: oai:DiVA.org:kth-181453DiVA: diva2:900166
FunderSwedish Energy Agency
QC 20160203. QC 201603042016-02-032016-02-022016-03-04Bibliographically approved