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Crack-defined electronic nanogaps
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0001-6731-3886
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0002-0525-8647
KTH, School of Electrical Engineering (EES), Micro and Nanosystems.ORCID iD: 0000-0001-9552-4234
2016 (English)In: Advanced Materials, ISSN 0935-9648, E-ISSN 1521-4095, Vol. 28, no 11, 2178-2182 p.Article in journal (Refereed) Published
Abstract [en]

Achieving near-atomic-scale electronic nanogaps in a reliable and scalable manner will facilitate fundamental advances in molecular detection, plasmonics, and nanoelectronics. Here, a method is shown for realizing crack-defined nanogaps separating TiN electrodes, allowing parallel and scalable fabrication of arrays of sub-10 nm electronic nanogaps featuring individually defined gap widths.

Place, publisher, year, edition, pages
Wiley-VCH Verlagsgesellschaft, 2016. Vol. 28, no 11, 2178-2182 p.
Keyword [en]
arrays, crack-junctions, tunnel junctions, electronic transport, nanogaps
National Category
Nano Technology
Identifiers
URN: urn:nbn:se:kth:diva-182341DOI: 10.1002/adma.201504569ISI: 000372459000007PubMedID: 26784270ScopusID: 2-s2.0-84960233693OAI: oai:DiVA.org:kth-182341DiVA: diva2:904218
Funder
EU, European Research Council, 267528 , 277879
Note

QC 20160304

Available from: 2016-02-18 Created: 2016-02-18 Last updated: 2016-04-18Bibliographically approved

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