RF LDMOS Power Amplifier Integrated Circuits for Cellular Wireless Base Station Applications
2006 (English)Conference paper (Refereed)
Three broadband RF LDMOS Power Amplifier Integrated Circuits (PA ICs) for cellular base station applications have been developed in Si LDMOS IC technologies. They can be used for all typical modulation formats from 800 MHz to 2300 MHz, and power levels from 30 W to 50 W depending on application. GSM/EDGE PA IC achieved 35 dB gain and 30 W with 200 MHz bandwidth (22% bandwidth) at 900_MHz. CDMA2000 PA IC achieved 30 dB gain and 40 W with 300 MHz bandwidth (15% bandwidth) at 1900 MHz. TD-SCDMA/WCDMA PA IC achieved 27 dB gain and 50 W under TD-SCDMA signal and 40 W under WCDMA signal with 400 MHz bandwidth (20% bandwidth) at 2100 MHz. All three PA ICs have been characterized under all typical modulations formats and showed excellent linear power, efficiency, and bandwidth. The excellent performances of these three PA ICs, simplify power amplifier designs, enable a small footprint and help lower the cost of the modern base-station.
Place, publisher, year, edition, pages
IEEE , 2006.
IdentifiersURN: urn:nbn:se:kth:diva-182557DOI: 10.1109/MWSYM.2006.249835ISI: 000244379002010ScopusID: 2-s2.0-34250358262OAI: oai:DiVA.org:kth-182557DiVA: diva2:904697
IEEE MTT-S International Microwave Symposium
QC 201603022016-02-192016-02-192016-03-02Bibliographically approved