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20-Watt LDMOS Power Amplifier IC for Linear Driver Application
Infineon Technol. Nordic AB, Kista, Sweden.
2007 (English)Conference paper, Published paper (Refereed)
Abstract [en]

This paper describes an LDMOS power amplifier integrated circuit for W-CDMA applications. The IC was developed with Infineon's Si LDMOS IC technology. The PA IC achieved 28.5 dB gain. When tuned for W-CDMA the IC showed 20 W PEP at IM3 = -30 dBc (two-tone), 400-MHz bandwidth (20%) around 2100 MHz, gain flatness of 0.15 dB/30 MHz, and phase flatness of 1 degree/30 MHz. The PA IC was characterized under all typical modulation formats, and is included in Infineon's product portfolio of power ICs for radio base stations.

Place, publisher, year, edition, pages
IEEE Press, 2007.
Series
IEEE MTT-S international microwave symposium digest, ISSN 0149-645X
National Category
Telecommunications
Identifiers
URN: urn:nbn:se:kth:diva-182740DOI: 10.1109/MWSYM.2007.380279Scopus ID: 2-s2.0-34748820604OAI: oai:DiVA.org:kth-182740DiVA: diva2:905593
Conference
2007 IEEE MTT-S International Microwave Symposium, IMS 2007; Honolulu, HI; United States;
Note

QC 20160223

Available from: 2016-02-23 Created: 2016-02-23 Last updated: 2016-02-23Bibliographically approved

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Total: 51 hits
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