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Operation of single-chip MOSFET and IGBT devices after failure due to repetitive avalanche: University in collaboration with industry
KTH.
KTH, School of Electrical Engineering (EES), Electric power and energy systems.ORCID iD: 0000-0002-8565-4753
2015 (English)In: Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on, 2015Conference paper (Refereed)Text
Abstract [en]

This paper presents analysis of post-failure behaviour of MOSFETs and IGBTs operating in a series connected string. The aim of this experimental study is to analyse the operation of devices in case of sudden loss of controllability, leading to repetitive avalanche conditions at relatively low current and subsequent failure due to overheat. For redundant designs it is important that the devices are locked in stable conducting state after the failure and the string continue its operation.

Place, publisher, year, edition, pages
2015.
Keyword [en]
MOSFET;avalanche breakdown;insulated gate bipolar transistors;IGBT devices;post-failure behaviour;repetitive avalanche conditions;series connected string;single-chip MOSFET;Insulated gate bipolar transistors;Junctions;Logic gates;MOSFET;Reliability;Silicon carbide;Switches;Breakdown;Device characterisation;Fault tolerance;IGBT;MOSFET;Power semiconductor device;Reliability
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-182749DOI: 10.1109/EPE.2015.7309190ISI: 000377101801033ScopusID: 2-s2.0-84965002231OAI: oai:DiVA.org:kth-182749DiVA: diva2:905652
Conference
Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on, 8-10 Sept. 2015
Funder
StandUp
Note

QC 2016-03-30

Available from: 2016-02-23 Created: 2016-02-23 Last updated: 2016-07-06Bibliographically approved

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Blinov, AndreiNorrga, Staffan
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ReferencesLink to record
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