Change search
ReferencesLink to record
Permanent link

Direct link
Optimal switching of SiC lateral MOSFETs
KTH, School of Electrical Engineering (EES), Electric power and energy systems.ORCID iD: 0000-0002-1755-1365
2015 (English)In: Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on, IEEE , 2015, 1-10 p.Conference paper (Refereed)Text
Abstract [en]

The switching loss of the 1700 V SiC Planar-Gate MOSFET is significant at switching frequencies above 2 kHz. If a simple resistive gate driver is adjusted for the worst case operating point (temperature, commutated voltage and current) with a given application dV/dt requirement, other operating points usually have lower dV/dt resulting in non-optimal losses. The paper shows results of an optimized gate-drive solution, adapting a current source control in order to reduce the losses while fulfilling the application dV/dt requirements.

Place, publisher, year, edition, pages
IEEE , 2015. 1-10 p.
Keyword [en]
field effect transistor switches;losses;power MOSFET;SiC;lateral MOSFET;optimal switching;planar gate MOSFET;resistive gate driver;switching loss;voltage 1700 V;worst case operating point;Current measurement;Logic gates;MOSFET;Silicon carbide;Switches;Voltage control;Voltage measurement;MOSFET;Silicon Carbide (SiC);Voltage Source Converter (VSC)
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-182757DOI: 10.1109/EPE.2015.7309140ISI: 000377101800091ScopusID: 2-s2.0-84965008185OAI: oai:DiVA.org:kth-182757DiVA: diva2:905688
Conference
Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on
Funder
StandUp
Note

QC 20160316

Available from: 2016-02-23 Created: 2016-02-23 Last updated: 2016-07-06Bibliographically approved

Open Access in DiVA

No full text

Other links

Publisher's full textScopus

Search in DiVA

By author/editor
Nee, Hans-Peter
By organisation
Electric power and energy systems
Other Electrical Engineering, Electronic Engineering, Information Engineering

Search outside of DiVA

GoogleGoogle Scholar
The number of downloads is the sum of all downloads of full texts. It may include eg previous versions that are now no longer available

Altmetric score

Total: 4 hits
ReferencesLink to record
Permanent link

Direct link