Investigation of long-term parameter variations of SiC power MOSFETs
2015 (English)In: Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on, IEEE , 2015, 1-10 p.Conference paper (Refereed)Text
Experimental investigations on the gate-oxide and body-diode reliability of commercially available Silicon Carbide (SiC) MOSFETs from the second generation are performed. The body-diode conduction test is performed with a current density of 50 A/cm2 in order to determine if the body-diode of the MOSFETs is free from bipolar degradation. The second test is stressing the gate-oxide. A negative bias is applied on the gate oxide in order to detect and quantify potential drifts.
Place, publisher, year, edition, pages
IEEE , 2015. 1-10 p.
circuit reliability;elemental semiconductors;logic gates;power MOSFET;bipolar degradation;body-diode conduction test;body-diode reliability;gate-oxide reliability;long-term parameter variations;negative bias;potential drift detection;potential drift quantification;silicon carbide power MOSFET;Logic gates;MOSFET;Reliability;Silicon carbide;Stress;Temperature measurement;Threshold voltage;Device characterization;MOSFET;Power semiconductor device;Reliability;Robustness;Silicon Carbide (SiC);Wide bandgap devices
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-182756DOI: 10.1109/EPE.2015.7309314ISI: 000377101802046ScopusID: 2-s2.0-84965026745OAI: oai:DiVA.org:kth-182756DiVA: diva2:905690
Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on
QC 201603032016-02-232016-02-232016-07-06Bibliographically approved