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Experimental evaluation of SiC BJTs and SiC MOSFETs in a series-loaded resonant converter
KTH, School of Electrical Engineering (EES), Electric power and energy systems.ORCID iD: 0000-0001-6184-6470
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2015 (English)In: Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on, IEEE , 2015, 1-9 p.Conference paper (Refereed)Text
Abstract [en]

SiC devices such as MOSFETs and BJTs have proven themselves to be contenders to improve the efficiency of resonant converters. The losses of the full-bridge inverter are well below 1% of the rated power at switching frequencies up to 200 kHz, making it possible to reach even higher frequencies. An experimental setup is built and two different full-bridge inverters are tested. One is built with SiC MOSFETs and no additional anti-parallel diodes and one with SiC BJTs and SiC Schottky diodes.

Place, publisher, year, edition, pages
IEEE , 2015. 1-9 p.
Keyword [en]
Schottky diodes;bridge circuits;elemental semiconductors;invertors;power MOSFET;power bipolar transistors;resonant power convertors;efficiency improvement;full-bridge inverter losses;series-loaded resonant converter;silicon carbide BJT;silicon carbide MOSFET;silicon carbide Schottky diodes;Frequency modulation;Loss measurement;MOSFET;Resonant frequency;Silicon carbide;Snubbers;Zero voltage switching;Converter control;High frequency power converter;Resonant converter;Silicon Carbide (SiC);Soft switching
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject
SRA - Energy
Identifiers
URN: urn:nbn:se:kth:diva-182755DOI: 10.1109/EPE.2015.7309472ISI: 000377101803093ScopusID: 2-s2.0-84965046356OAI: oai:DiVA.org:kth-182755DiVA: diva2:905693
Conference
Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on
Funder
StandUp
Note

QC 20160317

Available from: 2016-02-23 Created: 2016-02-23 Last updated: 2016-07-06Bibliographically approved

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Tolstoy, GeorgColmenares, JuanNee, Hans-Peter
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