Experimental evaluation of SiC BJTs and SiC MOSFETs in a series-loaded resonant converter
2015 (English)In: Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on, IEEE , 2015, 1-9 p.Conference paper (Refereed)Text
SiC devices such as MOSFETs and BJTs have proven themselves to be contenders to improve the efficiency of resonant converters. The losses of the full-bridge inverter are well below 1% of the rated power at switching frequencies up to 200 kHz, making it possible to reach even higher frequencies. An experimental setup is built and two different full-bridge inverters are tested. One is built with SiC MOSFETs and no additional anti-parallel diodes and one with SiC BJTs and SiC Schottky diodes.
Place, publisher, year, edition, pages
IEEE , 2015. 1-9 p.
Schottky diodes;bridge circuits;elemental semiconductors;invertors;power MOSFET;power bipolar transistors;resonant power convertors;efficiency improvement;full-bridge inverter losses;series-loaded resonant converter;silicon carbide BJT;silicon carbide MOSFET;silicon carbide Schottky diodes;Frequency modulation;Loss measurement;MOSFET;Resonant frequency;Silicon carbide;Snubbers;Zero voltage switching;Converter control;High frequency power converter;Resonant converter;Silicon Carbide (SiC);Soft switching
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject SRA - Energy
IdentifiersURN: urn:nbn:se:kth:diva-182755DOI: 10.1109/EPE.2015.7309472ISI: 000377101803093ScopusID: 2-s2.0-84965046356OAI: oai:DiVA.org:kth-182755DiVA: diva2:905693
Power Electronics and Applications (EPE’15 ECCE-Europe), 2015 17th European Conference on
QC 201603172016-02-232016-02-232016-07-06Bibliographically approved