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RF LDMOS Power Amplifier Integrated Circuit for W-CDMA/TD-SCDMA applications
Infineon Technologies Nordic AB, SE-16481 Kista, Sweden.
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2007 (English)In: | Export | Download | Add to List | More... Proceedings of the 36th European Microwave Conference, EuMC 2006, IEEE , 2007, 1343-1346 p.Conference paper (Refereed)
Abstract [en]

This article presents an LDMOS power amplifier integrated circuit for W-CDMA/TD-SCDMA applications. The IC has been developed in Infineon's Si LDMOS IC technology. The gain achieved was 27 dB. When tuned for TD-SCDMA, the IC showed 50 W PEP at IM3 = -30 dBc (two-tone). When tuned for W-CDMA, it showed 40 W PEP at IM3 = -30 dBc (two-tone) and 400 MHz bandwidth (20%) around 2100 MHz. The PA IC has been characterized under all typical modulation formats, and is included in Infineon's product portfolio of power ICs for radio base stations

Place, publisher, year, edition, pages
IEEE , 2007. 1343-1346 p.
National Category
Telecommunications
Identifiers
URN: urn:nbn:se:kth:diva-183064DOI: 10.1109/EUMC.2006.281265ScopusID: 2-s2.0-41649089175OAI: oai:DiVA.org:kth-183064DiVA: diva2:907108
Conference
36th European Microwave Conference
Note

QC 20160310

Available from: 2016-02-26 Created: 2016-02-26 Last updated: 2016-03-10Bibliographically approved

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Bagger, Reza
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