Wide Temperature Range Integrated Bandgap Voltage References in 4H–SiC
2016 (English)In: IEEE Electron Device Letters, ISSN 0741-3106, E-ISSN 1558-0563, Vol. 37, no 2, 146-149 p.Article in journal (Refereed) Published
Three fully integrated bandgap voltage references (BGVRs) have been demonstrated in a 4H-SiC bipolar technology. The circuits have been characterized over a wide temperature range from 25 degrees C to 500 degrees C. The three BGVRs are functional and exhibit 46 ppm/degrees C, 131 ppm/degrees C, and 120 ppm/degrees C output voltage variations from 25 degrees C up to 500 degrees C. This letter shows that SiC bipolar BGVRs are capable of providing stable voltage references over a wide temperature range.
Place, publisher, year, edition, pages
IEEE , 2016. Vol. 37, no 2, 146-149 p.
Other Electrical Engineering, Electronic Engineering, Information Engineering
Research subject Information and Communication Technology
IdentifiersURN: urn:nbn:se:kth:diva-183118DOI: 10.1109/LED.2015.2508064ISI: 000370432000005ScopusID: 2-s2.0-84962019543OAI: oai:DiVA.org:kth-183118DiVA: diva2:907859
FunderSwedish Foundation for Strategic Research
QC 201603112016-02-292016-02-292016-05-04Bibliographically approved