Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC
2015 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 821-823, 440-443 p.Article in journal (Refereed) Published
Ohmic CoSi2 contacts to n-type 4H-SiC showing low contact resistance have been made by sputter depositing sequential layers of Si and Co on 4H-SiC substrates followed by a two-step rapid thermal anneal at 600 °C and 950 °C. The contacts formed have been characterized at temperatures ranging from-40 °C to 500 °C with a specific contact resistance of 3.80∙10-5 Ωcm2 at 25 °C and a minimum of 6.0∙10-6 Ωcm2 at 500 °C.
Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2015. Vol. 821-823, 440-443 p.
SiC ohmic contacts
Other Electrical Engineering, Electronic Engineering, Information Engineering
IdentifiersURN: urn:nbn:se:kth:diva-183137DOI: 10.4028/www.scientific.net/MSF.821-823.440ScopusID: 2-s2.0-84950336093OAI: oai:DiVA.org:kth-183137DiVA: diva2:908104
FunderSwedish Foundation for Strategic Research , RE10-0011
QC 201603142016-03-012016-03-012016-08-08Bibliographically approved