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Sputtered Ohmic Cobalt Silicide Contacts to 4H-SiC
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0001-8108-2631
KTH, School of Information and Communication Technology (ICT), Integrated Devices and Circuits.ORCID iD: 0000-0002-5845-3032
2015 (English)In: Materials Science Forum, ISSN 0255-5476, E-ISSN 1662-9752, Vol. 821-823, 440-443 p.Article in journal (Refereed) Published
Abstract [en]

Ohmic CoSi2 contacts to n-type 4H-SiC showing low contact resistance have been made by sputter depositing sequential layers of Si and Co on 4H-SiC substrates followed by a two-step rapid thermal anneal at 600 °C and 950 °C. The contacts formed have been characterized at temperatures ranging from-40 °C to 500 °C with a specific contact resistance of 3.80∙10-5 Ωcm2 at 25 °C and a minimum of 6.0∙10-6 Ωcm2 at 500 °C.

Place, publisher, year, edition, pages
Trans Tech Publications Inc., 2015. Vol. 821-823, 440-443 p.
Keyword [en]
SiC ohmic contacts
National Category
Other Electrical Engineering, Electronic Engineering, Information Engineering
Identifiers
URN: urn:nbn:se:kth:diva-183137DOI: 10.4028/www.scientific.net/MSF.821-823.440Scopus ID: 2-s2.0-84950336093OAI: oai:DiVA.org:kth-183137DiVA: diva2:908104
Conference
ECSCRM 2014
Projects
SSF HOTSiC
Funder
Swedish Foundation for Strategic Research , RE10-0011
Note

QC 20160314

Available from: 2016-03-01 Created: 2016-03-01 Last updated: 2017-11-30Bibliographically approved

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Smedfors2015(647 kB)33 downloads
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Zetterling, Carl-Mikael

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